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参数资料
| 型号： | HUFA75309T3ST |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET |
| 中文描述： | 3 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 4/8页 |
| 文件大小： | 175K |
| 代理商： | HUFA75309T3ST |
2001 Fairchild Semiconductor Corporation
HUFA75309T3ST Rev. B
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves (Continued)
1
10
0.01
0.1
1
10
100
20
I AS
,A
V
AL
ANCHE
CURRENT
(
A
)
tAV, TIME IN AVALANCHE (ms)
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R = 0
If R
≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25
oC
STARTING TJ = 150
oC
0
5
10
15
20
25
012
34
5
VGS = 10V
VGS = 20V
I D
,DRAI
N
CURRENT
(A
)
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
TA = 25
oC
VGS = 5V
VGS = 8V
VGS = 6V
VGS = 7V
DUTY CYCLE = 0.5% MAX
0
5
10
15
20
25
01.5
3.0
4.5
6.0
7.5
I D,
DRAIN
CURRENT
(
A
)
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
VDD = 15V
25oC
-55oC
150oC
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
NORM
AL
IZ
ED
DRAI
N
T
O
S
O
URCE
TJ, JUNCTION TEMPERATURE (
oC)
ON
RESIST
ANCE
PULSE DURATION = 80
s
VGS = 10V, ID = 3A
DUTY CYCLE = 0.5% MAX
0.4
0.6
0.8
1.0
1.2
-80
-40
0
40
80
120
160
NORMA
L
IZ
E
D
GA
T
E
TJ, JUNCTION TEMPERATURE (
oC)
T
HRESHOL
D
V
O
L
T
A
G
E
VGS = VDS, ID = 250A
0.8
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
BREAKDO
WN
V
O
L
T
A
G
E
TJ, JUNCTION TEMPERATURE (
oC)
NOR
M
AL
IZ
ED
DRAIN
T
O
SOURCE
ID = 250A
HUFA75309T3ST
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相关代理商/技术参数 |
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|---|---|
| HUFA75321D3 | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75321D3S | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75321D3ST | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| HUFA75321D3STQ | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| HUFA75321P3 | 功能描述:MOSFET 20a 55V N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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