参数资料
型号: HX6656RVFT
厂商: Electronic Theatre Controls, Inc.
英文描述: 32K x 8 ROM-SOI
中文描述: 32K的× 8 ROM的绝缘硅
文件页数: 1/12页
文件大小: 155K
代理商: HX6656RVFT
GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened ROM is a high perform-
ance 32,768 word x 8-bit read only memory with industry-
standard functionality. It is fabricated with Honeywell’s
radiation hardened technology, and is designed for use in
systems operating in radiation environments. The ROM
operates over the full military temperature range and re-
quires only a single 5 V
± 10% power supply. The ROM is
available with either TTL or CMOS compatible I/O. Power
consumption is typically less than 15 mW/MHz in operation,
and less than 5 mW when de-selected. The ROM operation
is fully asynchronous, with an associated typical access
time of 14 ns.
Honeywell’s enhanced SOI RICMOS IV (Radiation Insen-
sitive CMOS) technology is radiation hardened through the
use of advanced and proprietary design, layout, and pro-
cess hardening techniques. The RICMOS IV process is a
5-volt, SIMOX CMOS technology with a 150 gate oxide
and a minimum drawn feature size of 0.75
m (0.6 m
effective gate length—L
eff).
Additional features include
tungsten via plugs, Honeywell’s proprietary SHARP pla-
narization process, and a lightly doped drain (LDD) struc-
ture for improved short channel reliability.
RADIATION
Fabricated with RICMOS IV Silicon on Insulator
(SOI) 0.75
m Process (L
eff = 0.6 m)
Total Dose Hardness through 1x106 rad(SiO
2)
Dynamic and Static Transient Upset
Hardness through 1x109 rad(Si)/s
Dose Rate Survivability through 1x1011 rad(Si)/s
Neutron Hardness through 1x1014 cm-2
SEU Immune
Latchup Free
32K x 8 ROM—SOI
HX6656
OTHER
Read Cycle Times
< 17 ns (Typical)
≤ 25 ns (-55 to 125°C)
Typical Operating Power <15 mW/MHz
Asynchronous Operation
CMOS or TTL Compatible I/O
Single 5 V
± 10% Power Supply
Packaging Options
- 28-Lead Flat Pack (0.500 in. x 0.720 in.)
- 28-Lead DIP, MIL-STD-1835, CDIP2-T28
- 36-Lead Flat Pack (0.630 in. x 0.650 in.)
Military & Space Products
FEATURES
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