参数资料
型号: HY27US081G1MTCS
厂商: HYNIX SEMICONDUCTOR INC
元件分类: PROM
英文描述: 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48
封装: 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
文件页数: 33/39页
文件大小: 312K
代理商: HY27US081G1MTCS
Rev 0.2 / May. 2007
39
Preliminary
HY27US(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
MARKING INFORMATION - TSOP1/USOP
Packag
M arking Exam ple
TS O P 1
/
US O P
K
O
R
H
Y
2
7
x
S
x
1
G
x
M
x
Y
W
x
- hynix
- K O R
- H Y 27 xS xx1G xM xxxx
H Y : Hynix
2 7: NAND Flash
x: Pow er Supply
S: Classification
xx: Bit O rganization
1G : Density
x: Mode
M: Version
x: Package Type
x: Package M aterial
x: O perating Tem perature
x: Bad Block
- Y : Year (ex: 5= year 2005, 06= year 2006)
- w w : W ork W eek (ex: 12= w ork w eek 12)
- xx: Process Code
Note
- C apital Letter
- Sm all Letter
: H ynix Sym bol
: O rigin Country
: U(2.7V~ 3.6V)
: Single Level Cell+ D ouble D ie+ Sm all Block
: 08(x8), 16(x16)
: 1G bit
: 1(1nCE & 1R/nB; Sequential Row R ead Enable)
2(1nCE & 1R /nB; Sequential Row R ead D isable)
: 1st G eneration
: T(48-TSO P1), S(48-U SO P)
: Blank(N orm al), P(Lead Free)
: C(0℃ ~70℃ ), E(-25℃ ~85℃ )
M(-30℃ ~85℃ ), I(-40℃ ~85℃ )
: B(Included Bad Block), S(1~ 5 Bad Block),
P(All G ood Block)
: Fixed Item
: N on-fixed Item
: Part N um ber
相关PDF资料
PDF描述
HY27US081G1MTPMP 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48
HY5116100BJ-70 16M X 1 FAST PAGE DRAM, 70 ns, PDSO24
HY5116804CSLT-80 2M X 8 EDO DRAM, 80 ns, PDSO28
HY514400ALT-60 1M X 4 FAST PAGE DRAM, 60 ns, PDSO20
HY51VS65173HGLT-5 4M X 16 EDO DRAM, 50 ns, PDSO50
相关代理商/技术参数
参数描述
HY27US08281A 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
HY27US08282A 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
HY27US08561A 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
HY27US08561A-T (P) 制造商:SK Hynix Inc 功能描述:
HY27US08561M 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:256Mbit (32Mx8bit / 16Mx16bit) NAND Flash