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参数资料
| 型号： | HY57V283220LT-7I |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 |
| 封装： | 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 |
| 文件页数： | 1/14页 |
| 文件大小： | 292K |
| 代理商： | HY57V283220LT-7I |
HY57V283220T-I/ HY5V22F-I
4 Banks x 1M x 32Bit Synchronous DRAM
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.6/Nov. 02
DESCRIPTION
The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the mem-
ory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as
4banks of 1,048,576x32.
HY57V283220T-I / HY5V22F-I is offering fully synchronous operation referenced to a positive edge of the clock. All
inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to
achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write
cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count
sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate
command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined
design is not restricted by a `2N` rule.)
FEATURES
JEDEC standard 3.3V power supply
All device pins are compatible with LVTTL interface
86TSOP-II, 90Ball FBGA with 0.8mm of pin pitch
All inputs and outputs referenced to positive edge of
system clock
Data mask function by DQM0,1,2 and 3
Internal four banks operation
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
Burst Read Single Write operation
ORDERING INFORMATION
Part No.
Clock Frequency
Organization
Interface
Package
HY57V283220(L)T-5I
HY5V22(L)F-5I
200MHz
4Banks x 1Mbits
x32
LVTTL
86TSOP-II
90Ball FBGA
HY57V283220(L)T-55I
HY5V22(L)F-55I
183MHz
4Banks x 1Mbits
x32
LVTTL
86TSOP-II
90Ball FBGA
HY57V283220(L)T-6I
HY5V22(L)F-6I
166MHz
4Banks x 1Mbits
x32
LVTTL
86TSOP-II
90Ball FBGA
HY57V283220(L)T-7I
HY5V22(L)F-7I
143MHz
4Banks x 1Mbits
x32
LVTTL
86TSOP-II
90Ball FBGA
HY57V283220(L)T-8I
HY5V22(L)F-8I
125MHz
4Banks x 1Mbits
x32
LVTTL
86TSOP-II
90Ball FBGA
HY57V283220(L)T-PI
HY5V22(L)F-PI
100MHz
4Banks x 1Mbits
x32
LVTTL
86TSOP-II
90Ball FBGA
HY57V283220(L)T-SI
HY5V22(L)F-SI
100MHz
4Banks x 1Mbits
x32
LVTTL
86TSOP-II
90Ball FBGA
相关PDF资料 |
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| HY57V283220T-6I | 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 |
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| HY5DU561622DT-6 | 16M X 16 DDR DRAM, 0.7 ns, PDSO66 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HY57V283220LT-8 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220LT-H | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220LT-P | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220LTP-5 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
| HY57V283220LTP-55 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
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