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参数资料
| 型号： | HY57V283220LT-7I |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 |
| 封装： | 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 |
| 文件页数： | 10/14页 |
| 文件大小： | 292K |
| 代理商： | HY57V283220LT-7I |
Rev. 0.6/Nov. 02
5
HY57V283220T-I / HY5V22F-I
ABSOLUTE MAXIMUM RATINGS
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION (TA=-40 to 85°C)
Note :
1.All voltages are referenced to VSS = 0V
2.VIH (max) is acceptable 5.6V AC pulse width with
≤3ns of duration with no input clamp diodes
3.VIL (min) is acceptable -2.0V AC pulse width with
≤3ns of duration with no input clamp diodes
AC OPERATING CONDITION (TA=-40 to 85°C, 3.0V ≤VDD ≤3.6V, VSS=0V - Note1)
Note :
1.Output load to measure access times is equivalent to two TTL gates and one capacitor (30pF)
For details, refer to AC/DC output load circuit
Parameter
Symbol
Rating
Unit
Ambient Temperature
TA
-40 ~ 85
°C
Storage Temperature
TSTG
-55 ~ 125
°C
Voltage on Any Pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD relative to VSS
VDD, VDDQ
-1.0 ~ 4.6
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD
1W
Soldering Temperature
Time
TSOLDER
260
10
°C Sec
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
VDD, VDDQ
3.135
3.3
3.6
V
1
Input high voltage
VIH
2.0
3.0
VDDQ + 0.3
V
1,2
Input low voltage
VIL
VSSQ - 0.3
0
0.8
V
1,3
Parameter
Symbol
Value
Unit
Note
AC input high / low level voltage
VIH / VIL
2.4/0.4
V
Input timing measurement reference level voltage
Vtrip
1.4
V
Input rise / fall time
tR / tF
1
ns
Output timing measurement reference level
Voutref
1.4
V
Output load capacitance for access time measurement
CL
30
pF
1
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| HY57V283220LT-8 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4 Banks x 1M x 32Bit Synchronous DRAM |
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