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参数资料
| 型号： | HY57V643220D |
| 厂商： | Hynix Semiconductor Inc. |
| 英文描述： | 4Banks x 512K x 32bits Synchronous DRAM |
| 中文描述： | 4Banks x为512k × 32位同步DRAM |
| 文件页数： | 7/13页 |
| 文件大小： | 227K |
| 代理商： | HY57V643220D |
Rev. 0.3 / Sep. 2004
7
HY57V643220D(L/S)T(P) Series
4Banks x 512K x 32bits Synchronous DRAM
ABSOLUTE MAXIMUM RATING
DC OPERATING CONDITION
(T
A
= -40 to 85
o
C
)
Note : 1. All voltages are referenced to V
SS
= 0V
2. V
IH
(max) is acceptable 5.6V AC pulse width with <=3ns of duration.
3. V
IL
(min) is acceptable -2.0V AC pulse width with <=3ns of duration
AC OPERATING TEST CONDITION
(T
A
= -40 to 85
o
C
, V
DD
=3.3
±
0.3V, V
SS
=0V)
CAPACITANCE
(T
A
= -40 to 85
o
C
, f=1MHz, V
DD
=3.3V)
Parameter
Symbol
Rating
Unit
Ambient Temperature
TA
-40 ~ 85
o
C
Storage Temperature
TSTG
-55 ~ 125
o
C
Voltage on Any Pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD relative to VSS
VDD
-1.0 ~ 4.6
V
Voltage on VDDQ relative to VSS
VDDQ
-1.0 ~ 4.6
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD
1
W
Soldering Temperature
.
Time
TSOLDER
260
.
10
o
C
.
Sec
Parameter
Symbol
Min
Typ
Max
Unit
Note
Power Supply Voltage
VDD, VDDQ
3.0
3.3
3.6
V
1
Input High Voltage
VIH
2.0
3.3
VDDQ+0.3
V
1, 2
Input Low Voltage
VIL
-0.3
-
0.8
V
1, 3
Parameter
Symbol
Value
Unit
Note
AC Input High/Low Level Voltage
VIH / VIL
2.4/0.4
V
Input Timing Measurement Reference Level Voltage
Vtrip
1.4
V
Input Rise/Fall Time
tR / tF
1
ns
Output Timing Measurement Reference Level Voltage
Voutref
1.4
V
Output Load Capacitance for Access Time Measurement
CL
30
pF
Parameter
Pin
Symbol
Min
Max
Unit
Input capacitance
CLK
CI1
2.5
3.5
pF
A0 ~ A10, BA0, BA1, CKE, CS, RAS, CAS, WE,
DQM 0~3
CI2
2.5
3.8
pF
Data input / output capacitance
DQ0 ~ DQ31
CI/O
4
6.5
pF
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| HY57V643220DLT-7 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4Banks x 512K x 32bits Synchronous DRAM |
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