- 您现在的位置：买卖IC网 > PDF目录384468 > HY5PS1G821LM-C4 (HYNIX SEMICONDUCTOR INC) 1Gb DDR2 SDRAM(DDP) PDF资料下载
参数资料
| 型号： | HY5PS1G821LM-C4 |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 1Gb DDR2 SDRAM(DDP) |
| 中文描述： | 128M X 8 DDR DRAM, 0.5 ns, PBGA63 |
| 封装： | FBGA-63 |
| 文件页数： | 58/79页 |
| 文件大小： | 1109K |
| 代理商： | HY5PS1G821LM-C4 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页当前第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页
Rev. 0.2 / Oct. 2005
58
1
HY5PS12421(L)M
HY5PS12821(L)M
4.1 Absolute Maximum DC Ratings
4.2 Operating Temperature Condition
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to Vss
- 1.0 V ~ 2.3 V
V
1
VDDQ
Voltage on VDDQ pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
VDDL
Voltage on VDDL pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
V
IN
,
V
OUT
Voltage on any pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
T
STG
Storage Temperature
-55 to +100
°
C
1
1.
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Symbol
Parameter
Rating
Units
Notes
Toper
Operating Temperature
0 to 85
°
C
1,2
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions,
please refer to JESD51-2 standard.
2. The operatin temperature range are the temperature where all DRAM specification will be supported. Outside of this temperature
rang, even it is still within the limit of stress condition, some deviation on portion of operation specification may be required. During
operation, the DRAM case temperature must be maintained between 0 ~ 85
°
C under all other specification parameters. However,
in some applications, it is desirable to operate the DRAM up to 95
°
C case temperature. Therefore 2 spec options may exist.
1) Supporting 0 - 85
°
C with full JEDEC AC & DC specifications. This is the minimum requirements for all oprating temperature options.
2) Supporting 0 - 85
°
C and being able to extend to 95
°
C with doubling auto-refresh commands in frequency to a 32 ms
period(tRFI=3.9
us
).
Note; Self-refresh period within the above DRAM is hard coded at 64ms(tREFI= 7.8
us
).
Therfore, it is imperative that the system ensures
the DRAM is at or below 85
°
C case temperature before initiating self-refresh operation.
4. Operating Conditions
相关PDF资料 |
PDF描述 |
|---|---|
| HY6264A-15 | RES 2.74 KOHM 1.0 % 2010S |
| HY6264A | 8KX8-Bit CMOS SRAM |
| HY6264A-10 | 8KX8-Bit CMOS SRAM |
| HY6264A-12 | 8KX8-Bit CMOS SRAM |
| HY6264A-70 | 8KX8-Bit CMOS SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY5PS1G821LM-E3 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM(DDP) |
| HY5PS1G821M | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM(DDP) |
| HY5PS1G821M-C4 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM(DDP) |
| HY5PS1G821M-E3 | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM(DDP) |
| HY5PS1G831AFP | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
发布紧急采购，3分钟左右您将得到回复。