参数资料
型号: HY5PS1G821LM-C4
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 1Gb DDR2 SDRAM(DDP)
中文描述: 128M X 8 DDR DRAM, 0.5 ns, PBGA63
封装: FBGA-63
文件页数: 74/79页
文件大小: 1109K
代理商: HY5PS1G821LM-C4
Rev. 0.2 / Oct. 2005
74
1
HY5PS12421(L)M
HY5PS12821(L)M
Parameter
Symbol
DDR2-400 3-3-3
DDR2-533 4-4-4
Unit
Note
min
max
min
max
Exit active power down to read
command
tXARD
2
2
tCK
1
Exit active power down to read
command
(Slow exit, Lower power)
tXARDS
6 - AL
6 - AL
tCK
1, 2
CKE minimum pulse width
(high and low pulse width)
t
CKE
3
3
tCK
Average periodic Refresh
Interval
tREFI
7.8
7.8
us
ODT turn-on delay
t
AOND
2
2
2
2
tCK
ODT turn-on
t
AON
tAC(min)
tAC(max)+1
tAC(min)
tAC(max)+
1
ns
16
ODT turn-on(Power-Down
mode)
t
AONPD
tAC(min)+2
2tCK+tAC
(max)+1
tAC(min)+2
2tCK+tAC
(max)+1
ns
ODT turn-off delay
t
AOFD
2.5
2.5
2.5
2.5
tCK
ODT turn-off
t
AOF
tAC(min)
tAC(max)+
0.6
tAC(min)
tAC(max)+
0.6
ns
17
ODT turn-off (Power-Down
mode)
t
AOFPD
tAC(min)+2
2.5tCK+tAC
(max)+1
tAC(min)+2
2.5tCK+tA
C(max)+1
ns
ODT to power down entry
latency
tANPD
3
3
tCK
ODT power down exit latency
tAXPD
8
8
tCK
OCD drive mode output delay
tOIT
0
12
0
12
ns
Minimum time clocks remains
ON after CKE asynchronously
drops LOW
tDelay
tIS+tCK+tIH
tIS+tCK+tI
H
ns
15
* : tRAS(min) , tRC(min) specification for DDR2-400 4-4-4 is 45ns, 60ns respectively.
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