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参数资料
| 型号： | HY5V52EMP-H |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | DRAM |
| 英文描述： | 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 |
| 封装： | 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-90 |
| 文件页数： | 12/14页 |
| 文件大小： | 172K |
| 代理商： | HY5V52EMP-H |
Rev. 1.0 / Nov. 2005
7
1
Synchronous DRAM Memory 256Mbit (8Mx16bit *2stack)
HY5V52E(L)M(P) Series
BASIC FUNCTIONAL DESCRIPTION
Mode Register
BA1
BA0
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
0000
OP Code
00
CAS Latency
BT
Burst Length
OP Code
A9
Write Mode
0Burst Read and Burst Write
1
Burst Read and Single Write
Burst Type
A3
Burst Type
0Sequential
1Interleave
Burst Length
A2
A1
A0
Burst Length
A3 = 0
A3=1
00
0
1
00
1
2
01
0
4
01
1
8
1
0
Reserved
1
0
1
Reserved
1
0
Reserved
1
Full Page
Reserved
CAS Latency
A6
A5
A4
CAS Latency
0
Reserved
0
1
0
1
0
2
0
1
3
1
0
Reserved
1
0
1
Reserved
1
0
Reserved
1
Reserved
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HY5V52F | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4Banks x 2M x 32bits Synchronous DRAM |
| HY5V52F-H | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4Banks x 2M x 32bits Synchronous DRAM |
| HY5V52F-P | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4Banks x 2M x 32bits Synchronous DRAM |
| HY5V52FP-H | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4Banks x 2M x 32bits Synchronous DRAM |
| HY5V52FP-P | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:4Banks x 2M x 32bits Synchronous DRAM |
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