参数资料
型号: HY5V52EMP-H
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
封装: 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-90
文件页数: 4/14页
文件大小: 172K
代理商: HY5V52EMP-H
Rev. 1.0 / Nov. 2005
12
1
Synchronous DRAM Memory 256Mbit (8Mx16bit *2stack)
HY5V52E(L)M(P) Series
AC CHARACTERISTICS II (AC operating conditions unless otherwise noted)
Note: 1. A new command can be given tRC after self refresh exit.
Parameter
Symbol
6
H
Unit
Note
Min
Max
Min
Max
RAS Cycle Time
Operation
tRC
60
-
63
-
ns
Auto
Refresh
tRRC
60
-
63
-
ns
RAS to CAS Delay
tRCD
18
-
20
-
ns
RAS Active Time
tRAS
42
100K
42
100K
ns
RAS Precharge Time
tRP
18
-
20
-
ns
RAS to RAS Bank Active Delay
tRRD
12
-
15
-
ns
CAS to CAS Delay
tCCD
1-1-
CLK
Write Command to Data-In Delay
tWTL
0
-
0
-
CLK
Data-in to Precharge Command
tDPL
2-2-
CLK
Data-In to Active Command
tDAL
tDPL + tRP
DQM to Data-Out Hi-Z
tDQZ
2-2-
CLK
DQM to Data-In Mask
tDQM
0-0-
CLK
MRS to New Command
tMRD
2-2-
CLK
Precharge to Data Output High-
Z
CL = 3
tPROZ3
3-3-
CLK
CL = 2
tPROZ2
2-2-
CLK
Power Down Exit Time
tDPE
1-1-
CLK
Self Refresh Exit Time
tSRE
1-1-
CLK
1
Refresh Time
tREF
-64-
64
ms
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