参数资料
型号: HYB39S256160DT-6
厂商: INFINEON TECHNOLOGIES AG
元件分类: 齐纳二极管
英文描述: Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
中文描述: 250 的低电流运算,低反向泄露,低噪声稳压二极管
文件页数: 11/22页
文件大小: 564K
代理商: HYB39S256160DT-6
INFINEON Technologies
19
2002-04-23
HYB39S256400/800/160DT(L)/DC(L)
256MBit Synchronous DRAM
Row Cycle Time during Auto
Refresh
t
RFC
60
63
67
70
ns
Activate(a) to Activate(b)
Command period
t
RRD
12–14–15–16–
ns
5
CAS(a) to CAS(b) Command
period
t
CCD
1–
CLK
Refresh Cycle
Refresh Period (8192 cycles)
t
REF
–64
64
–64
64
ms
Self Refresh Exit Time
t
SREX
1–
1
CLK
Read Cycle
Data Out Hold Time
t
OH
2.5
3–
ns
2,
6
Data Out to Low Impedance Time
t
LZ
0–
ns
Data Out to High Impedance Time
t
HZ
36
37
38
ns
DQM Data Out Disable Latency
t
DQZ
–2
CLK
Write Cycle
Last Data Input to Precharge
(Write without AutoPrecharge)
t
WR
12–14–15–15–
ns
7
Last Data Input to Activate
(Write with AutoPrecharge)
tDAL,min
(twr/tck) + (trp/tck)
CLK 8
DQM Write Mask Latency
t
DQW
0–
CLK
Parameter
Symbol
Limit Values
Unit
-6
PC166-
333
-7
PC133-
222
-7.5
PC133-
333
-8
PC100-
222
min.
max.
min.
max.
min.
max.
min.
max.
相关PDF资料
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HYB39S256160DT-8 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
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