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参数资料
| 型号： | HYB39S256160DT-6 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | 齐纳二极管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低电流运算，低反向泄露，低噪声稳压二极管 |
| 文件页数： | 22/22页 |
| 文件大小： | 564K |
| 代理商： | HYB39S256160DT-6 |
INFINEON Technologies
9
2002-04-23
HYB39S256400/800/160DT(L)/DC(L)
256MBit Synchronous DRAM
DQM
LDQM
UDQM
Input
Pulse
Active
High
The Data Input/Output mask places the DQ buffers in a
high impedance state when sampled high. In Read mode,
DQM has a latency of two clock cycles and controls the
output buffers like an output enable. In Write mode, DQM
has a latency of zero and operates as a word mask by
allowing input data to be written if it is low but blocks the
write operation if DQM is high.
One DQM input is present in x4 and x8 SDRAMs, LDQM
and UDQM controls the lower and upper bytes in x16
SDRAMs.
VDD
VSS
Supply –
–
Power and ground for the input buffers and the core logic.
VDDQ
VSSQ
Supply –
–
Isolated power supply and ground for the output buffers to
provide improved noise immunity.
Pin
Type
Signal Polarity Function
相关PDF资料 |
PDF描述 |
|---|---|
| HYB39S256160DT-7 | surface mount silicon Zener diodes |
| HYB39S256160DT-75 | surface mount silicon Zener diodes |
| HYB39S256160DT-8 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| HYB39S256160DTL-6 | 256 MBit Synchronous DRAM |
| HYB39S256160DTL-7 | 256 MBit Synchronous DRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HYB39S256160DT-7 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:256-MBit Synchronous DRAM |
| HYB39S256160DT-7.5 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:?256M (16Mx16) PC133 3-3-3? |
| HYB39S256160DT-75 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:256-MBit Synchronous DRAM |
| HYB39S256160DT-8 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:256-MBit Synchronous DRAM |
| HYB39S256160DTL-6 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:256-MBit Synchronous DRAM |
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