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参数资料
| 型号： | HYS72D64020GR-7-X |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | DRAM |
| 英文描述： | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| 封装： | DIMM-184 |
| 文件页数： | 4/23页 |
| 文件大小： | 277K |
| 代理商： | HYS72D64020GR-7-X |
HYS 72Dxx0x0GR
Registered DDR-I SDRAM-Modules
INFINEON Technologies
12
2.01
Auto Precharge Write Recovery +
Precharge Time
t
DAL
(twr/tck + trp/tck)
t
CK
–
Internal Write to Read Command Delay
t
WTR
1
–
1
–
1
–
t
CK
–
Exit self-refresh to non-read command
t
XSNR
75
80
ns
Exit self-refresh to read command
t
XSDR
200
t
CK
Average Periodic Refresh Intercal
t
REF
–
7.8
–
7.8
–
7.8
s
–
CLK Transition Time
t
T
0.5
––
–
0.5
–
ns
–
1)
Minimum Auto Refresh cycle time is greater than minimum cycle time during normal Read or Write operation.
2)
t
HP is the lesser of tCL and TCH
3)
These parameters guarantee device timing, but they are not necessarily tested on each device
they may be guaranteed by design or tester correlation
t
IS / tIH =0.9ns for DDR266 are measured with command / address input slew rate of > 1.0V/ns
for command / address input slew rate of > 0.5V/ns and < 1.0V/ns t
IS / tIH = 1.0ns should be guaranteed by design
for DDR200 t
IS / tIH = 1.2ns command / address input slew rate of 1.0V/ns is assumed
slew rate is measured between V
OH(AC) and VOL(AC)
CK / CK slew rates are assumed to be > 1.0V/ns
Pulse width for command / address signals to be properly sampled at rising edges of clock shall be a minimum of 2.2ns
Environmental Parameters
Symbol
Parameter
Rating
Units
Notes
T
OPR
Operating Temperature (ambient)
0 to +55
oC
H
OPR
Operating Humidity (relative)
10 to 90
%
T
STG
Storage Temperature
-50 to +100
oC
1)
H
STG
Storage Humidity (without condensation)
5 to 95
%
1)
Barometric Pressure (operating and storage)
105 to 69
K Pascal
2)
1) stresses greater than those listed may cause permanent damage to the device. Device functional operation at or above these
conditions is not implied.
2) up to 3000 m (9850 ft)
AC Characteristics (cont’d)(for reference only)
(values apply to the SDRAM component and do not include register, PLL, or card wiring)
(
T
A =0 to +70 °C, VDD =2.5 V±0.2 V)
Parameter
Symbol
-7
DDR266A
-7.5
DDR266B
-8
DDR200
Unit
Notes
min.
max.
min.
max.
min.
max.
相关PDF资料 |
PDF描述 |
|---|---|
| HYS72D64020GR-7.5-X | 64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 |
| HYS72T128000EU-2.5-C2 | 128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 |
| HYS72T64000EP-3.7-B2 | 64M X 72 DDR DRAM MODULE, DMA240 |
| HZ20-1 | 19.25 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HYS72D64020GR-8-A | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:2.5 V 184-pin Registered DDR-I SDRAM Modules |
| HYS72D64020GR-8-B | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:2.5 V 184-pin Registered DDR-I SDRAM Modules |
| HYS72D64020GU-7-A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:?512MB (64Mx72) PC2100 2-bank? |
| HYS72D64020GU-7-B | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:184-Pin Unbuffered Dual-In-Line Memory Modules |
| HYS72D64020GU-7F-B | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:184-Pin Unbuffered Dual-In-Line Memory Modules |
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