参数资料
型号: IBM0116405
厂商: IBM Microeletronics
英文描述: 4M x 4 12/10 EDO DRAM(16M位 动态RAM(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通))
中文描述: 4米× 4 12月10日EDO公司的DRAM(1,600位动态随机存储器(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通))
文件页数: 10/31页
文件大小: 556K
代理商: IBM0116405
IBM0116405
IBM0116405B
4M x 4 12/10 EDO DRAM
IBM0116405M
IBM0116405P
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 10 of 31
28H4720
SA14-4226-06
Revised 4/97
Read-Modify-Write Cycle
Symbol
Parameter
-50
-60
Units
Notes
Min.
Max.
Min.
Max.
t
RWC
Read-Modify-Write Cycle Time
110
135
ns
t
RWD
RAS to WE Delay Time
67
79
ns
1
t
CWD
CAS to WE Delay Time
30
34
ns
1
t
AWD
Column Address to WE Delay Time
42
49
ns
1
t
OEH
OE Command Hold Time
7
10
ns
1. t
WCS
, t
RWD
, t
CWD
and t
AWD
are not restrictive operating parameters. They are included in the data sheet as electrical characteristics
only. If t
WCS
t
WCS
(min), the cycle is an early write cycle and the data pin will remain open circuit (high impedance) through the
entire cycle. If t
RWD
t
RWD
(min), t
CWD
t
CWD
(min) and t
AWD
t
AWD
(min), the cycle is a Read-Modify-Write cycle and the data out
will contain data read from the selected cell. If neither of the above sets of conditions are satisfied, the condition of the data out (at
access time) is indeterminate.
Extended Data Out (Hyper Page) Mode Cycle
Symbol
Parameter
-50
-60
Units
Notes
Min.
Max.
Min.
Max.
t
HCAS
EDO (Hyper Page) Mode CAS Pulse Width
8
10K
10
10K
ns
t
HPC
EDO (Hyper Page) Mode Cycle Time (Read/Write)
20
25
ns
t
HPRWC
EDO (Hyper Page) Mode Read Modify Write Cycle Time
51
60
ns
t
DOH
Data-out Hold Time from CAS
5
5
ns
t
WHZ
Output buffer Turn-Off Delay from WE
0
10
0
10
ns
t
WPZ
WE Pulse Width to Output Disable at CAS High
7
10
ns
t
CPRH
RAS Hold Time from CAS Precharge
30
35
ns
t
CPA
Access Time from CAS Precharge
28
35
ns
1
t
RASP
EDO (Hyper Page) Mode RAS Pulse Width
50
200K
60
200K
ns
t
OEP
OE Precharge
5
5
ns
t
OEHC
OE High Hold Time from CAS High
5
5
ns
1. Measured with the specified current load and 100pF at V
OL
= 0.8V and V
OH
= 2.0V.
Discontinued (9/98 - last order; 3/99 last ship)
相关PDF资料
PDF描述
IBM0116405B 4M x 4 12/10 EDO DRAM(16M位 动态RAM(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通))
IBM0116405M 4M x 4 12/10 EDO DRAM(16M位 动态RAM(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通))
IBM0116405P 4M x 4 12/10 EDO DRAM(16M位 动态RAM(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通))
IBM0117405 4M x 4 11/11 EDO DRAM(16M位 动态RAM(超页面模式读写并带22条地址线,其中11条为行地址选通,11条为列地址选通))
IBM0117405B 4M x 4 11/11 EDO DRAM(16M位 动态RAM(超页面模式读写并带22条地址线,其中11条为行地址选通,11条为列地址选通))
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