IBM0117805
IBM0117805B
2M x 8 11/10 EDO DRAM
IBM0117805M
IBM0117805P
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 10 of 31
28H4724
SA14-4221-06
Revised 4/97
Read-Modify-Write Cycle
Symbol
Parameter
-50
-60
Units
Notes
Min.
Max.
Min.
Max.
t
RWC
Read-Modify-Write Cycle Time
110
—
135
—
ns
t
RWD
RAS to WE Delay Time
67
—
79
—
ns
1
t
CWD
CAS to WE Delay Time
30
—
34
—
ns
1
t
AWD
Column Address to WE Delay Time
42
—
49
—
ns
1
t
OEH
OE Command Hold Time
7
—
10
—
ns
1. t
WCS
, t
RWD
, t
CWD
and t
AWD
are not restrictive operating parameters. They are included in the data sheet as electrical characteristics
only. If t
WCS
≥
t
WCS
(min), the cycle is an early write cycle and the data pin will remain open circuit (high impedance) through the
entire cycle. If t
RWD
≥
t
RWD
(min), t
CWD
≥
t
CWD
(min) and t
AWD
≥
t
AWD
(min), the cycle is a Read-Modify-Write cycle and the data out
will contain data read from the selected cell. If neither of the above sets of conditions are satisfied, the condition of the data out (at
access time) is indeterminate.
Extended Data Out (Hyper Page) Mode Cycle
Symbol
Parameter
-50
-60
Units
Notes
Min.
Max.
Min.
Max.
t
HCAS
EDO (Hyper Page) Mode CAS Pulse Width
8
10K
10
10K
ns
t
HPC
EDO (Hyper Page) Mode Cycle Time (Read/Write)
20
—
25
—
ns
t
HPRWC
EDO (Hyper Page) Mode Read Modify Write Cycle Time
51
—
60
—
ns
t
DOH
Data-out Hold Time from CAS
5
—
5
—
ns
t
WHZ
Output buffer Turn-Off Delay from WE
0
10
0
10
ns
t
WPZ
WE Pulse Width to Output Disable at CAS High
7
—
10
—
ns
t
CPRH
RAS Hold Time from CAS Precharge
30
—
35
—
ns
t
CPA
Access Time from CAS Precharge
—
28
—
35
ns
1
t
RASP
EDO (Hyper Page) Mode RAS Pulse Width
50
200K
60
200K
ns
t
OEP
OE Precharge
5
—
5
—
ns
t
OEHC
OE High Hold Time from CAS High
5
—
5
—
ns
1. Measured with the specified current load and 100pF at V
OL
= 0.8V and V
OH
= 2.0V.
Discontinued (9/98 - last order; 3/99 last ship)