- 您现在的位置：买卖IC网 > PDF目录17258 > ICL7667CPAZ (Intersil)IC MOSFET DRIVER DUAL HS 8DIP PDF资料下载
参数资料
| 型号： | ICL7667CPAZ |
| 厂商： | Intersil |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL HS 8DIP |
| 标准包装： | 50 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 20ns |
| 电流 - 峰： | 1A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 1240 (CN2011-ZH PDF) |
ICL7667
Absolute Maximum Ratings
Supply Voltage V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±18V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . V- -0.3V to V+ +0.3V
Package Dissipation, T A +25°C . . . . . . . . . . . . . . . . . . . . . . .500mW
Operating Conditions
ICL7667C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Supply Voltages: V+ = +4.5V to +15V; V- = Ground to -15V
Logic Inputs: Logic Low = V- < Vin < 0.8V ; Logic High = 2.0V< Vin <
V+
Thermal Information
Thermal Resistance (Typical, Note 1, 2) θ JA (°C/W) θ JC (°C/W)
8 Ld PDIP Package . . . . . . . . . . . . . . . 150 N/A
8 Ld SOIC Package . . . . . . . . . . . . . . . 170 N/A
Maximum Storage Temperature Range . . . . . . . . . . . -65° to +150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Pb-free PDIPs can be used for through hole wave solder processing
only. They are not intended for use in Reflow solder processing
applications.
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1. θ JA is measured with the component mounted on an evaluation PC board in free air.
2. For θ JC , the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
Parameters with MIN and/or MAX limits are 100% tested at +25°C, V+ = 0V unless otherwise specified.
Temperature limits established by characterization and are not production tested.
ICL7667C, M
T A = +25°C
ICL7667M
0°C ≤ T A ≤ +70°C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
DC SPECIFICATIONS
Logic 1 Input Voltage
Logic 1 Input Voltage
Logic 0 Input Voltage
Logic 0 Input Voltage
Input Current
Output Voltage High
Output Voltage Low
Output Resistance
Output Resistance
Power Supply Current
Power Supply Current
V IH
V IH
V IL
V IL
I IL
V OH
V OL
R OUT
R OUT
I CC
I CC
V+ = 4.5V
V+V+ = 15V
V+ = 4.5V
V+ = 15V
V+ = 15V, V IN = 0V and 15V
V+ = 4.5V and 15V
V+ = 4.5V and 15V
V IN = V IL , I OUT = -10mA, V+ = 15V
V IN = V IH , I OUT = 10mA, V+ = 15V
V+ = 15V, V IN = 3V both inputs
V+ = 15V, V IN = 0V both inputs
2.0
2.0
-
-
-0.1
V+ -0.05
-
-
-
-
-
-
-
-
-
-
V+
0
7
8
5
150
-
-
0.8
0.8
0.1
-
0.05
10
12
7
400
2.0
2.0
-
-
-0.1
V+ -0.1
-
-
-
-
-
-
-
-
-
-
V+
-
-
-
-
-
-
-
0.5
0.5
0.1
-
0.1
12
13
8
400
V
V
V
V
μA
V
V
Ω
Ω
mA
μA
SWITCHING SPECIFICATIONS
Delay Time
Rise Time
Fall Time
Delay Time
T D2
T R
T F
T D1
(Figure 3)
(Figure 3)
(Figure 3)
(Figure 3)
-
-
-
-
35
20
20
20
50
30
30
30
-
-
-
-
-
-
-
-
60
40
40
40
ns
ns
ns
ns
2
FN2853.6
April 29, 2010
相关PDF资料 |
PDF描述 |
|---|---|
| EEC25DRES | CONN EDGECARD 50POS .100 EYELET |
| ECC07DRAS | CONN EDGECARD 14POS R/A .100 SLD |
| ESC05DRAN | CONN EDGECARD 10POS R/A .100 SLD |
| HIP2100EIBZ | IC DRIVER HALF BRIDGE 8EPSOIC |
| ECC08DRAN | CONN EDGECARD 16POS R/A .100 SLD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ICL7667CTV | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| ICL7667EBA | 功能描述:功率驱动器IC Dual Power Inverting MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ICL7667EBA+ | 功能描述:功率驱动器IC Dual Power Inverting MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ICL7667EBA+T | 功能描述:功率驱动器IC Dual Power Inverting MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ICL7667EBA-T | 功能描述:功率驱动器IC Dual Power Inverting MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。