- 您现在的位置：买卖IC网 > PDF目录17258 > ICL7667CPAZ (Intersil)IC MOSFET DRIVER DUAL HS 8DIP PDF资料下载
参数资料
| 型号： | ICL7667CPAZ |
| 厂商： | Intersil |
| 文件页数： | 6/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL HS 8DIP |
| 标准包装： | 50 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 20ns |
| 电流 - 峰： | 1A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 1240 (CN2011-ZH PDF) |
ICL7667
overcome this high capacitance and quickly turns the
MOSFET fully on or off.
SG1525 IC, except that the outputs are inverted. This
inversion is needed since ICL7667 is an inverting buffer.
18
16
14
12
I D = 1A
V DD = 50V
Transformer Coupled Drive of MOSFETs
Transformers are often used for isolation between the logic
and control section and the power section of a switching
regulator. The high output drive capability of the ICL7667
enables it to directly drive such transformers. Figure 11
10
8
6
4
680pF
V DD = 375V
V DD = 200V
shows a typical transformer coupled drive circuit. PWM ICs
with either active high or active low output can be used in
this circuit, since any inversion required can be obtained by
reversing the windings on the secondaries.
2
0
-2
212pF
630pF
Buffered Drivers for Multiple MOSFETs
In very high power applications which use a group of
MOSFETs in parallel, the input capacitance may be very large
0
2
4 6 8 10 12 14 16 18
GATE CHARGE - Q G (NANO-COULOMBS)
20
and it can be difficult to charge and discharge quickly.
Figure 13 shows a circuit which works very well with very
FIGURE 9. MOSFET GATE DYNAMIC CHARACTERISTICS
Direct Drive of MOSFETs
Figure 11 shows interfaces between the ICL7667 and typical
switching regulator ICs. Note that unlike the DS0026, the
ICL7667 does not need a dropping resistor and speedup
capacitor between it and the regulator IC. The ICL7667, with
its high slew rate and high voltage drive can directly drive the
gate of the MOSFET. The SG1527 IC is the same as the
large capacitance loads. When the input of the driver is zero,
Q 1 is held in conduction by the lower half of the ICL7667 and
Q 2 is clamped off by Q 1 . When the input goes positive, Q 1 is
turned off and a current pulse is applied to the gate of Q 2 by
the upper half of the ICL7667 through the transformer, T 1 .
After about 20ns, T 1 saturates and Q 2 is held on by its own
C GS and the bootstrap circuit of C 1 , D 1 and R 1 . This
bootstrap circuit may not be needed at frequencies greater
than 10kHz since the input capacitance of Q 2 discharges
slowly.
15V
+165V DC
+V C
A
V+
IRF730
6
SG1527
GND
B
ICL7667
V-
FIGURE 10A.
IRF730
FN2853.6
April 29, 2010
相关PDF资料 |
PDF描述 |
|---|---|
| EEC25DRES | CONN EDGECARD 50POS .100 EYELET |
| ECC07DRAS | CONN EDGECARD 14POS R/A .100 SLD |
| ESC05DRAN | CONN EDGECARD 10POS R/A .100 SLD |
| HIP2100EIBZ | IC DRIVER HALF BRIDGE 8EPSOIC |
| ECC08DRAN | CONN EDGECARD 16POS R/A .100 SLD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ICL7667CTV | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| ICL7667EBA | 功能描述:功率驱动器IC Dual Power Inverting MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ICL7667EBA+ | 功能描述:功率驱动器IC Dual Power Inverting MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ICL7667EBA+T | 功能描述:功率驱动器IC Dual Power Inverting MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ICL7667EBA-T | 功能描述:功率驱动器IC Dual Power Inverting MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。