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参数资料
| 型号： | IDT7006 |
| 厂商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM |
| 中文描述： | 高速16K的× 8双端口静态RAM |
| 文件页数： | 9/20页 |
| 文件大小： | 270K |
| 代理商： | IDT7006 |
IDT7006S/L
HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.07
9
IDT7006X15
Com'l. Only
Min.
IDT7006X17
Com'l. Only
Min.
IDT7006X20
IDT7006X25
Symbol
WRITE CYCLE
t
WC
t
EW
t
AW
t
AS
t
WP
t
WR
t
DW
t
HZ
Parameter
Max.
Max.
Min.
Max.
Min.
Max.
Unit
Write Cycle Time
Chip Enable to End-of-Write
(3)
Address Valid to End-of-Write
Address Set-up Time
(3)
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
(1, 2)
Data Hold Time
(4)
Write Enable to Output in High-Z
(1, 2)
Output Active from End-of-Write
(1, 2, 4)
15
12
12
0
12
0
10
—
—
—
—
—
—
—
—
10
17
12
12
0
12
0
10
—
—
—
—
—
—
—
—
10
20
15
15
0
15
0
15
—
—
—
—
—
—
—
—
12
25
20
20
0
20
0
15
—
—
—
—
—
—
—
—
15
ns
ns
ns
ns
ns
ns
ns
ns
t
DH
0
—
0
—
0
—
0
—
ns
t
WZ
t
OW
—
0
—
—
—
0
—
—
—
0
12
—
—
0
15
—
ns
ns
t
SWRD
SEM
Flag Write to Read Time
5
—
5
—
5
—
5
—
ns
t
SPS
SEM
Flag Contention Window
5
—
5
—
5
—
5
—
ns
IDT7006X35
IDT7006X55
IDT7006X70
Mil. Only
Min.
Symbol
WRITE CYCLE
t
WC
t
EW
t
AW
t
AS
t
WP
t
WR
t
DW
t
HZ
t
DH
Parameter
Min.
Max.
Min.
Max.
Max.
Unit
Write Cycle Time
Chip Enable to End-of-Write
(3)
Address Valid to End-of-Write
Address Set-up Time
(3)
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
(1, 2)
Data Hold Time
(4)
Write Enable to Output in High-Z
(1, 2)
Output Active from End-of-Write
(1, 2, 4)
SEM
Flag Write to Read Time
35
30
30
0
25
0
15
—
0
—
—
—
—
—
—
—
15
—
55
45
45
0
40
0
30
—
0
—
—
—
—
—
—
—
25
—
70
50
50
0
50
0
40
—
0
—
—
—
—
—
—
—
30
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
WZ
—
15
—
25
—
30
ns
t
OW
t
SWRD
0
5
—
—
0
5
—
—
0
5
—
—
ns
ns
t
SPS
SEM
Flag Contention Window
5
—
5
—
5
—
ns
NOTES:
1. Transition is measured
±
500mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM,
CE
= V
IL
,
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
. Either condition must be valid for the entire t
EW
time.
4. The specification for t
DH
must be met by the device supplying write data to the RAM under all operating conditions. Although t
DH
and t
OW
values will vary
over voltage and temperature, the actual t
DH
will always be smaller than the actual t
OW
.
5. "X" in part numbers indicates power rating (S or L).
2739 tbl 14
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(5)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT700620J | 制造商:未知厂家 制造商全称:未知厂家 功能描述:IC-SM-DUAL PORT SRAM |
| IDT7006L | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM |
| IDT7006L15F | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM |
| IDT7006L15FB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM |
| IDT7006L15G | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM |
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