参数资料
型号: IDT7008L25G
厂商: IDT, Integrated Device Technology Inc
文件页数: 7/19页
文件大小: 0K
描述: IC SRAM 512KBIT 25NS 84PGA
标准包装: 3
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 512K (64K x 8)
速度: 25ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 84-BPGA
供应商设备封装: 84-PGA(27.94x27.94)
包装: 托盘
其它名称: 7008L25G
IDT7008S/L
High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (1,6) (V CC = 5.0V ± 10%)
7008X15
Com'l Only
7008X20
Com'l
& Ind
7008X25
Com'l &
Military
Symbol
Parameter
Test Condition
Version
Typ. (2)
Max.
Typ. (2)
Max.
Typ. (2)
Max.
Unit
I CC
Dynamic Operating
Current
(Both Ports Active)
CE = V IL , Outputs Disabled
SEM = V IH
f = f MAX (3)
COM'L
MIL &
S
L
S
205
200
___
365
325
___
190
180
___
325
285
___
180
170
170
305
265
345
mA
IND
L
___
___
180
335
170
305
I SB1
Standby Current
(Both Ports - TTL Level
Inputs)
CE L = CE R = V IH
SEM R = SEM L = V IH
f = f MAX (3)
COM'L
MIL &
S
L
S
65
65
___
110
90
___
50
50
___
90
70
___
40
40
40
85
60
100
mA
IND
L
___
___
50
85
40
80
I SB2
I SB3
I SB4
Standby Current
(One Port - TTL Level
Inputs)
Full Standby Current
(Both Ports - All CMOS
Level Inputs)
Full Standby Current
(One Port - All CMOS
Level Inputs)
CE "A" = V IL and CE "B" = V IH (5)
Active Port Outputs Disabled,
f=f MAX (3)
SEM R = SEM L = V IH
Both Ports CE L and
CE R > V CC - 0.2V
V IN > V CC - 0.2V or
V IN < 0.2V, f = 0 (4)
SEM R = SEM L > V CC - 0.2V
CE "A" < 0.2V and
CE "B" > V CC - 0.2V (5)
SEM R = SEM L > V CC - 0.2V
V IN > V CC - 0.2V or V IN < 0.2V
Active Port Outputs Disabled
f = f MAX (3)
COM'L
MIL &
IND
COM'L
MIL &
IND
COM'L
MIL &
IND
S
L
S
L
S
L
S
L
S
L
S
L
130
130
___
___
1.0
0.2
___
___
120
120
___
___
245
215
___
___
15
5
___
___
220
190
___
___
115
115
___
115
1.0
0.2
___
0.2
110
110
___
110
215
185
___
220
15
5
___
10
190
160
___
195
105
105
105
105
1.0
0.2
1.0
0.2
100
100
100
100
200
170
230
200
15
5
30
10
170
145
200
175
mA
mA
mA
3198 tbl 10a
7008X35
Com'l &
Military
7008X55
Com'l, Ind
& Military
Symbol
Parameter
Test Condition
Version
Typ. (2)
Max.
Typ. (2)
Max.
Unit
I CC
Dynamic Operating Current
(Both Ports Active)
CE = V IL , Outputs Disabled
SEM = V IH
f = f MAX (3)
COM'L
MIL &
S
L
S
160
160
160
295
255
335
150
150
150
270
230
310
mA
IND
L
160
295
150
270
I SB1
Standby Current
(Both Ports - TTL Level
CE L = CE R = V IH
SEM R = SEM L = V IH
COM'L
S
L
30
30
85
60
20
20
85
60
mA
Inputs)
MIL &
IND
S
L
20
20
100
80
13
13
100
80
I SB2
Standby Current
(One Port - TTL Level
Inputs)
CE "A" = V IL and CE "B" = V IH (5)
Active Port Outputs Disabled,
f=f MAX (3)
SEM R = SEM L = V IH
COM'L
MIL &
S
L
S
95
95
95
185
155
215
85
85
85
165
135
195
mA
IND
L
95
185
85
165
I SB3
I SB4
Full Standby Current
(Both Ports - All CMOS
Level Inputs)
Full Standby Current
(One Port - All CMOS
Level Inputs)
Both Ports CE L and
CE R > V CC - 0.2V
V IN > V CC - 0.2V or
V IN < 0.2V, f = 0 (4)
SEM R = SEM L > V CC - 0.2V
CE "A" < 0.2V and
CE "B" > V CC - 0.2V (5)
SEM R = SEM L > V CC - 0.2V
COM'L
MIL &
IND
COM'L
S
L
S
L
S
L
1.0
0.2
1.0
0.2
90
90
15
5
30
10
160
135
1.0
0.2
1.0
0.2
80
80
15
5
30
10
135
110
mA
mA
V IN > V CC - 0.2V or V IN < 0.2V
Active Port Outputs Disabled
f = f MAX (3)
MIL &
IND
S
L
90
90
190
165
80
80
175
150
NOTES:
3198 tbl 10b
1. 'X' in part numbers indicates power rating (S or L)
2. V CC = 5V, T A = +25°C, and are not production tested. I CCDC = 120mA (Typ.)
3. At f = f MAX , address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/ t RC, and using “AC Test Conditions” of input
levels of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
6. Refer to Chip Enable Truth Table.
7
6.42
相关PDF资料
PDF描述
IDT7009L20PFI IC SRAM 1MBIT 20NS 100TQFP
IDT70125L25JG IC SRAM 18KBIT 25NS 52PLCC
IDT7014S12JG IC SRAM 36KBIT 12NS 52PLCC
IDT7015L35G IC SRAM 72KBIT 35NS 68PGA
IDT7016L35G IC SRAM 144KBIT 35NS 68PGA
相关代理商/技术参数
参数描述
IDT7008L25GB 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM
IDT7008L25GI 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM
IDT7008L25J 功能描述:IC SRAM 512KBIT 25NS 84PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT7008L25J8 功能描述:IC SRAM 512KBIT 25NS 84PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT7008L25JB 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM