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参数资料
| 型号： | IDT70121L35J |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 2/15页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 18KBIT 35NS 52PLCC |
| 标准包装： | 24 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 18K（2K x 9） |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 52-LCC（J 形引线） |
| 供应商设备封装： | 52-PLCC（19x19） |
| 包装： | 管件 |
| 其它名称： | 70121L35J |
IDT70121/IDT70125
High-Speed 2K x 9 Dual-Port Static RAM with Busy & Interrupt
Description
The IDT70121/IDT70125 are high-speed 2K x 9 Dual-Port Static
RAMs. The IDT70121 is designed to be used as a stand-alone 9-bit Dual-
Port RAM or as a “MASTER” Dual-Port RAM together with the IDT70125
“SLAVE” Dual-Port in 18-bit-or-more word width systems. Using the IDT
MASTER/SLAVE Dual-Port RAM approach in 18-bit-or-wider memory
system applications results in full-speed, error-free operation without the
need for additional discrete logic.
Both devices provide two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power-down
Pin Configurations (1,2,3)
05/27/04
INDEX
Industrial and Commercial Temperature Ranges
feature, controlled by CE , permits the on-chip circuitry of each port to enter
a very low standby power mode.
The IDT70121/IDT70125 utilizes a 9-bit wide data path to allow for
Data/Control and parity bits at the user’s option. This feature is especially
useful in data communications applications where it is necessary to use a
parity bit for transmission/reception error checking.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 675mW of power. Low-power (L)
versions offer battery backup data retention capability with each port
typically consuming 200μW from a 2V battery.
The IDT70121/IDT70125 devices are packaged in a 52-pin PLCC.
A 1L
A 2L
A 3L
8
9
10
46
45
44
OE R
A 0R
A 1R
A 4L
A 5L
A 6L
A 7L
A 8L
A 9L
I/O 0L
I/O 1L
I/O 2L
I/O 3L
11
12
13
14
15
16
17
18
19
20
IDT70121/125J
J52-1 (4)
52-Pin PLCC
Top View (5)
43
42
41
40
39
38
37
36
35
34
A 2R
A 3R
A 4R
A 5R
A 6R
A 7R
A 8R
A 9R
I/O 8R
I/O 7R
.
2654 drw 02
NOTES:
1. All V CC pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. Package body is approximately .75 in x .75 in x .17 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
6.42
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70121L35J8 | 功能描述:IC SRAM 18KBIT 35NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT70121L35JG | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
| IDT70121L35JGI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
| IDT70121L35JI | 功能描述:IC SRAM 18KBIT 35NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT70121L35JI8 | 功能描述:IC SRAM 18KBIT 35NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
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