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参数资料
| 型号： | IDT70121L35J |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 3/15页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 18KBIT 35NS 52PLCC |
| 标准包装： | 24 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 18K（2K x 9） |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 52-LCC（J 形引线） |
| 供应商设备封装： | 52-PLCC（19x19） |
| 包装： | 管件 |
| 其它名称： | 70121L35J |
IDT70121/IDT70125
High-Speed 2K x 9 Dual-Port Static RAM with Busy & Interrupt
Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings (1)
Symbol Rating Commercial
Unit
Recommended DC
Operating Conditions
& Industrial
Symbol
Parameter
Min.
Typ.
Max.
Unit
V TERM (2)
Terminal Voltage
with Respect
-0.5 to +7.0
V
V CC
Supply Voltage
4.5
5.0
5.5
V
to GND
GND
Ground
0
0
0
V
6.0
-0.5
T BIAS
T STG
Temperature
Under Bias
Storage
-55 to +125
-65 to +150
o
o
C
C
V IH
V IL
Input High Voltage
Input Low Voltage
2.2
(1)
____
____
(2)
0.8
V
V
Temperature
NOTES:
2654 tbl 03
I OUT
DC Output
Current
50
mA
1. V IL > -1.5V for pulse width less than 10ns.
2. V TERM must not exceed Vcc + 10%.
NOTES:
2654 tbl 01
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
Capacitance (T A = +25°C, f = 1.0MHz)
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliabilty.
2. V TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V TERM > V cc + 10%.
Symbol
C IN
C OUT
Parameter
Input Capacitance
Output Capacitance
Conditions (1)
V IN = 3dV
V OUT = 3dV
Max.
9
10
Unit
pF
pF
NOTE:
2654 tbl 04
Maximum Operating Temperature
and Supply Voltage (1)
1. This parameter is determined by device characterization but is not production
tested.
Grade
Ambient
GND
Vcc
Temperature
-40 C to +85 C
Commercial
Industrial
NOTES:
0 O C to +70 O C
O O
0V
0V
5.0V + 10%
5.0V + 10%
2654 tbl 02
1. This is the parameter T A . This is the "instant on" case temperature.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (V CC = 5.0V ± 10%)
70121S
70125S
70121L
70125L
Input Leakage Current
Symbol
|I LI |
|I LO |
V OL
V OH
Parameter
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V CC = 5.5V, V IN = 0V to V CC
V CC = 5.5V, CE = V IH , V OUT = 0V to V CC
I OL = +4mA
I OH = -4mA
Min.
___
___
___
2.4
Max.
10
10
0.4
___
Min.
___
___
___
2.4
Max.
5
5
0.4
___
Unit
μA
μA
V
V
NOTE:
1. At Vcc < 2.0V leakages are undefined.
3
2654 tbl 05
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相关代理商/技术参数 |
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| IDT70121L35J8 | 功能描述:IC SRAM 18KBIT 35NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT70121L35JG | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
| IDT70121L35JGI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
| IDT70121L35JI | 功能描述:IC SRAM 18KBIT 35NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT70121L35JI8 | 功能描述:IC SRAM 18KBIT 35NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
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