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参数资料
| 型号： | IDT7016S35G |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 4/20页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 144KBIT 35NS 68PGA |
| 标准包装： | 3 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 144K（16K x 9） |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 68-BPGA |
| 供应商设备封装： | 68-PGA（29.46x29.46） |
| 包装： | 托盘 |
| 其它名称： | 7016S35G |
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Truth Table I: Non-Contention Read/Write Control
Inputs (1)
Outputs
CE
H
L
L
X
R/ W
X
L
H
X
OE
X
X
L
H
SEM
H
H
H
X
I/O 0-8
High-Z
DATA IN
DATA OUT
High-Z
Deselcted: Power-Down
Write to Memory
Read Memory
Outputs Disabled
Mode
NOTE:
3190 tbl 02
1.
Condition: A 0L — A 13L ≠ A 0R — A 13R
Truth Table II: Semaphore Read/Write Control (1)
Inputs
Outputs
CE
H
H
L
R/ W
H
↑
X
OE
L
X
X
SEM
L
L
L
I/O 0-8
DATA OUT
DATA IN
____
Mode
Read Semaphore Flag Data Out (I/O 0 - I/O 8 )
Write I/O 0 into Semaphore Flag
Not Allowed
NOTE:
1. There are eight semaphore flags written to via I/O 0 and read from all I/O s (I/O 0 -I/O 8 ). These eight semaphores are addressed by A 0 - A 2.
3190 tbl 03
Absolute Maximum Ratings (1)
Symbol Rating Commercial Military
& Industrial
Unit
Maximum Operating
Temperature and Supply Voltage (1)
Grade Ambient GND Vcc
V TERM (2)
Terminal Voltage
with Respect
to GND
-0.5 to +7.0
-0.5 to +7.0
V
Military
Temperature
-55 O C to +125 O C
0V
5.0V + 10%
T BIAS
Temperature
-55 to +125
-65 to +135
o
C
Commercial
0 O C to +70 O C
0V
5.0V + 10%
-40 C to +85 C
Under Bias
Industrial
O O
0V
5.0V + 10%
T STG
Storage
Temperature
-65 to +150
-65 to +150
o
C
NOTES:
3190 tbl 05
I OUT
DC Output
50
50
mA
1. This is the parameter T A . This is the "instant on" case temperature.
Current
3190 tbl 04
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
Recommended DC Operating
Conditions
Symbol Parameter Min. Typ.
Max.
Unit
6.0
-0.5
2. V TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V TERM > Vcc + 10%.
V CC
GND
V IH
V IL
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
4.5
0
2.2
(1)
5.0
0
____
____
5.5
0
(2)
0.8
V
V
V
V
6.42
NOTES:
1. V IL > -1.5V for pulse width less than 10ns.
2. V TERM must not exceed Vcc + 10%.
3190 tbl 06
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7016S35GB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016S35GG | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S35GGB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S35GGI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S35J | 功能描述:IC SRAM 144KBIT 35NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
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