参数资料
型号: IDT7054L20G
厂商: IDT, Integrated Device Technology Inc
文件页数: 4/11页
文件大小: 0K
描述: IC SRAM 32KBIT 20NS 108PGA
标准包装: 3
格式 - 存储器: RAM
存储器类型: SRAM - 四端口,异步
存储容量: 32K (4K x 8)
速度: 20ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 108-BSPGA
供应商设备封装: 108-PGA(30.48x30.48)
包装: 托盘
其它名称: 7054L20G
IDT7054S/L
Pin Configurations
High-Speed  4K  x  8  FourPort?  Static  RAM
(1,2)
Military, Industrial and Commercial Temperature Ranges
Capacitance (1)
(T A = +25°C, f = 1.0MHz) TQFP ONLY
Symbol
C IN
C OUT
Parameter
Input Capacitance
Output
Conditions (2)
V IN = 0V
V OUT = 0V
Max.
9
10
Unit
pF
pF
Capacitance
NOTES:
3241 tbl 03
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV references the interpolated capacitance when the input and the output
signals switch from 0V to 3V or from 3V to 0V.
Maximum Operating Temperature
and Supply Voltage (1)
Ambient
Grade
Military
Commercial
Industrial
NOTES:
Temperature
-55°C to +125°C
0 ° C to +70 ° C
-40°C to +85°C
GND
0V
0V
0V
Vcc
5.0V + 10%
5.0V + 10%
5.0V + 10%
3241 tbl 04
1. This is the parameter T A . This is the "instant on" case temperature.
Absolute Maximum Ratings (1)
A 0
A 0
Symbol
Rating
Commercial
& Industrial
Military
Unit
A 0
V TERM (2)
Terminal Voltage
-0.5 to +7.0
-0.5 to +7.0
V
A 0
NOTES:
1. All V CC pins must be connected to the power supply.
with Respect
to GND
I/O
2. All GND pins must be connected to the ground supply.
T BIAS
Temperature
-55 to +125
-65 to +135
o
C
I/O
Under Bias
I/O
Storage
-65 to +150
-65 to +150
C
T STG
RecommendedDCOperating
Conditions
Symbol Parameter Min. Typ. Max.
Unit
o
Temperature
I OUT DC Output Current 50 50 mA
3241 tbl 05
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
I/O
R/
R/
R/
V CC
Supply Voltage
4.5
5.0
5.5
V
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
R/
GND
V IH
V IL
Ground
Input High Voltage
Input Low Voltage
0
2.2
-0.5 (1)
0
____
____
0
6.0 (2)
0.8
V
V
V
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. V TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V TERM > V CC + 10%.
GN
CE
CE
NOTES:
1. V IL > -1.5V for pulse width less than 10ns.
3241 tbl 02
CE
2. V TERM must not exceed Vcc + 10%.
CE
OE
OE
6.42
OE
OE
V C
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