参数资料
型号: IDT70T3519S200BC8
厂商: IDT, Integrated Device Technology Inc
文件页数: 20/28页
文件大小: 0K
描述: IC SRAM 9MBIT 200MHZ 256BGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 9M(256K x 36)
速度: 200MHz
接口: 并联
电源电压: 2.4 V ~ 2.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 256-LBGA
供应商设备封装: 256-CABGA(17x17)
包装: 带卷 (TR)
其它名称: 70T3519S200BC8
IDT70T3519/99/89S
High-Speed 2.5V 256/128/64K x 36 Dual-Port Synchronous Static RAM
Industrial and Commercial Temperature Ranges
Waveform of Interrupt Timing
CLK L
(2)
R/ W L
t SW
t SA
t HW
t HA
ADDRESS L (3)
3FFFF
t SC
t HC
CE L (1)
t INS
INT R
CLK R
CE R (1)
R/ W R
t SC
t SW
t SA
t HC
t HW
t HA
t INR
ADDRESS R (3)
NOTES:
1. CE 0 = V IL and CE 1 = V IH
3FFFF
5666 drw 19
2. All timing is the same for Left and Right ports.
3. Address is for internal register, not the external bus, i.e., address needs to be qualified by one of the Address counter control signals.
Truth Table III — Interrupt Flag (1)
Left Port
Right Port
R/ W R
CLK L
R/ W L
(2)
CE L
(2)
A 17L -A 0L
(3,4,5)
INT L
CLK R
(2)
CE R (2)
A 17R -A 0R (3,4,5)
INT R
Function
L
X
X
H
L
X
X
L
3FFFF
X
X
3FFFE
X
X
L
H
X
H
L
X
X
L
L
X
X
3FFFF
3FFFE
X
L
H
X
X
Set Right INT R Flag
Reset Right INT R Flag
Set Left INT L Flag
Reset Left INT L Flag
NOTES:
1. INT L and INT R must be initialized at power-up by Resetting the flags.
2. CE 0 = V IL and CE 1 = V IH . R/ W and CE are synchronous with respect to the clock and need valid set-up and hold times.
3. A17 X is a NC for IDT70T3599, therefore Interrupt Addresses are 1FFFF and 1FFFE.
4. A17 X and A16 X are NC's for IDT70T3589, therefore Interrupt Addresses are FFFF and FFFE.
5. Address is for internal register, not the external bus, i.e., address needs to be qualified by one of the Address counter control signals.
20
6.42
5666 tbl 12
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