参数资料
型号: IDT70T3719MS133BBG
厂商: IDT, Integrated Device Technology Inc
文件页数: 13/25页
文件大小: 0K
描述: IC SRAM 18MBIT 133MHZ 324BGA
标准包装: 1
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 18M(256K x 72)
速度: 133MHz
接口: 并联
电源电压: 2.4 V ~ 2.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 324-BGA
供应商设备封装: 324-PBGA(19x19)
包装: 托盘
其它名称: 70T3719MS133BBG
IDT70T3719/99M
High-Speed 2.5V 256/128K x 72 Dual-Port Synchronous Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Left Port Write to Pipelined Right Port Read
CLK "A"
(1,2,4)
R/ W "A
"
t SW
t SA
t HW
t HA
ADDRESS "A"
DATA IN"A"
MATCH
t SD
t HD
VALID
NO
MATCH
t CO (3)
CLK "B"
t CD2
R/ W "B"
t SW
t SA
t HW
t HA
ADDRESS "B"
DATA OUT"B"
MATCH
NO
MATCH
VALID
NOTES:
t DC
5687 drw 09
,
1. CE 0 , BE n , and ADS = V IL ; CE 1 , CNTEN , and REPEAT = V IH .
2. OE = V IL for Port "B", which is being read from. OE = V IH for Port "A", which is being written to.
3. If t CO < minimum specified, then data from Port "B" read is not valid until following Port "B" clock cycle (ie, time from write to valid read on opposite port will be
t CO + 2 t CYC2 + t CD2 ). If t CO > minimum, then data from Port "B" read is available on first Port "B" clock cycle (ie, time from write to valid read on opposite port
will be t CO + t CYC2 + t CD2 ).
4. All timing is the same for Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite of Port "A"
Timing Waveform with Port-to-Port Flow-Through Read
CLK "A"
t SW t HW
R/ W "A"
(1,2,4)
t SA
t HA
ADDRESS "A"
MATCH
t SD
t HD
NO
MATCH
DATA IN
"A"
VALID
t CO
(3)
CLK "B"
t CD1
R/ W "B"
t SW
t SA
t HW
t HA
ADDRESS "B"
MATCH
NO
MATCH
t CD1
DATA OUT "B"
NOTES:
t DC
VALID
t DC
VALID
5687 drw 10
,
1. CE 0 , BE n, and ADS = V IL ; CE 1 , CNTEN , and REPEAT = V IH .
2. OE = V IL for the Right Port, which is being read from. OE = V IH for the Left Port, which is being written to.
3. If t CO < minimum specified, then data from Port "B" read is not valid until following Port "B" clock cycle (i.e., time from write to valid read on opposite port will be
t CO + t CYC + t CD1 ). If t CO > minimum, then data from Port "B" read is available on first Port "B" clock cycle (i.e., time from write to valid read on opposite port will
be t CO + t CD1 ).
4. All timing is the same for both left and right ports. Port "A" may be either left or right port. Port "B" is the opposite of Port "A".
13
6.42
相关PDF资料
PDF描述
IDT70V5388S166BC8 IC SRAM 1.125MBIT 166MHZ 256BGA
KMPC8313EZQAFFB IC MPU POWERQUICC II 516-PBGA
IDT70V5388S133BC IC SRAM 1.125MBIT 133MHZ 256BGA
IDT70V5378S200BG8 IC SRAM 576KBIT 200MHZ 272BGA
KMPC8313EZQADDB IC MPU POWERQUICC II 516-PBGA
相关代理商/技术参数
参数描述
IDT70T3719MS166BBG 功能描述:IC SRAM 18MBIT 166MHZ 324BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T3799MS133BBG 功能描述:IC SRAM 9MBIT 133MHZ 324BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T3799MS133BBGI 功能描述:IC SRAM 9MBIT 133MHZ 324BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T3799MS166BBG 功能描述:IC SRAM 9MBIT 166MHZ 324BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T631S10BC 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)