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参数资料
| 型号： | IDT70T3719MS166BBG |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | DRAM |
| 英文描述： | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| 中文描述： | 256K X 72 DUAL-PORT SRAM, 12 ns, PBGA324 |
| 封装： | 19 X 19 MM, 1.40 MM HEIGHT, 1.76 MM PITCH, GREEN, BGA-324 |
| 文件页数： | 14/25页 |
| 文件大小： | 316K |
| 代理商： | IDT70T3719MS166BBG |
6.42
IDT70T3719/99M
High-Speed 2.5V 256/128K x 72 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
T iming Waveform of Pipelined Read-to-Write-to-Read
(
OE
= V
IL
)
(2)
Advanced
14
R/
W
ADDRESS
An
An +1
An + 2
An + 2
An + 3
An + 4
DATA
IN
Dn + 2
CE
0
CLK
5687 drw 11
Qn
Qn + 3
DATA
OUT
CE
1
BE
n
t
CD2
t
CKHZ
t
CKLZ
t
CD2
t
SC
t
HC
t
SB
t
HB
t
SW
t
HW
t
SA
t
HA
t
CH2
t
CL2
t
CYC2
READ
NOP
READ
t
SD
t
HD
(3)
(1)
t
SW
t
HW
WRITE
(4)
,
NOTES:
1. Output state (High, Low, or High-impedance) is determned by the previous cycle control signals.
2.
CE
0
,
BE
n
, and
ADS
= V
IL
; CE
1
,
CNTEN
, and
REPEAT
= V
IH
. "NOP" is "No Operation".
3. Addresses do not have to be accessed sequentially since
ADS
= V
IL
constantly loads the address on the rising edge of the CLK; numbers
are for reference use only.
4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
R/
W
ADDRESS
An
An +1
An + 2
An + 3
An + 4
An + 5
DATA
IN
Dn + 3
Dn + 2
CE
0
CLK
5687 drw 12
DATA
OUT
Qn
Qn + 4
CE
1
BE
n
OE
t
CH2
t
CL2
t
CYC2
t
CKLZ
t
CD2
t
OHZ
t
CD2
t
SD
t
HD
READ
WRITE
READ
t
SC
t
HC
t
SB
t
HB
t
SW
t
HW
t
SA
t
HA
(3)
(1)
t
SW
t
HW
(4)
,
T iming Waveform of Pipelined Read-to-Write-to-Read (
OE
Controlled)
(2)
NOTES:
1. Output state (High, Low, or High-impedance) is determned by the previous cycle control signals.
2.
CE
0
,
BE
n
, and
ADS
= V
IL
; CE
1
,
CNTEN
, and
REPEAT
= V
IH
.
3. Addresses do not have to be accessed sequentially since
ADS
= V
IL
constantly loads the address on the rising edge of the CLK; numbers are for reference
use only.
4. This timng does not meet requirements for fastest speed grade. This waveformindicates how logically it could be done if timng so allows.
相关PDF资料 |
PDF描述 |
|---|---|
| IDT70T3719MS166BBGI | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3799M | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3799MS133BBG | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3799MS133BBGI | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3799MS166BBG | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70T3799MS133BBG | 功能描述:IC SRAM 9MBIT 133MHZ 324BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T3799MS133BBGI | 功能描述:IC SRAM 9MBIT 133MHZ 324BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T3799MS166BBG | 功能描述:IC SRAM 9MBIT 166MHZ 324BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T631S10BC | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T631S10BC8 | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
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