- 您现在的位置：买卖IC网 > PDF目录378608 > IDT70T3799M (Integrated Device Technology, Inc.) HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE PDF资料下载
参数资料
| 型号： | IDT70T3799M |
| 厂商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| 中文描述： | 高速与3.3V 2.5V的256/128K × 72 SYNCHRONOU S双，端口静态RAM或2.5V的接口 |
| 文件页数： | 4/25页 |
| 文件大小： | 316K |
| 代理商： | IDT70T3799M |
6.42
IDT70T3719/99M
High-Speed 2.5V 256/128K x 72 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Advanced
Pin Names
Left Port
Right Port
Names
CE
0L
,
CE
1L
CE
0R
,
CE
1R
Chip Enables (Input)
(6)
R/
W
L
R/
W
R
Read/Write Enable (Input)
OE
L
OE
R
Output Enable (Input)
A
0L
- A
17L
(5)
A
0R
- A
17R
(5)
Address (Input)
I/O
0L
- I/O
71L
I/O
0R
- I/O
71R
Data Input/Output
CLK
L
CLK
R
Clock (Input)
PL/
FT
L
PL/
FT
R
Pipeline/Flow-Through (Input)
ADS
L
ADS
R
Address Strobe Enable (Input)
CNTEN
L
CNTEN
R
Counter Enable (Input)
REPEAT
L
REPEAT
R
Counter Repeat
(3)
BE
0L
-
BE
7L
BE
0R
-
BE
7R
Byte Enables (9-bit bytes) (Input)
(6)
V
DDQL
V
DDQR
Power (I/O Bus) (3.3V or 2.5V)
(1)
(Input)
OPT
L
OPT
R
Option for selecting V
DDQX
(1,2)
(Input)
ZZ
L
ZZ
R
Sleep Mode pin
(4)
(Input)
V
DD
Power (2.5V)
(1)
(Input)
V
SS
Ground (0V) (Input)
TDI
Test Data Input
TDO
Test Data Output
TCK
Test Logic Clock (10MHz) (Input)
TMS
Test Mode Select (Input)
TRST
Reset (Initialize TAP Controller) (Input)
INT
L
INT
R
Interrupt Flag (Output)
COL
L
COL
R
Collision Alert (Output)
5687 tbl 02
NOTES:
1. V
DD
, OPT
X
, and V
DDQX
must be set to appropriate operating levels prior to
applying inputs on the I/Os and controls for that port.
2. OPT
X
selects the operating voltage levels for the I/Os and controls on that port.
If OPT
X
is set to V
DD
(2.5V), then that port's I/Os and controls will operate at 3.3V
levels and V
DDQX
must be supplied at 3.3V. If OPT
X
is set to V
SS
(0V), then that
port's I/Os and address controls will operate at 2.5V levels and V
DDQX
must be
supplied at 2.5V. The OPT pins are independent of one another—both ports can
operate at 3.3V levels, both can operate at 2.5V levels, or either can operate
at 3.3V with the other at 2.5V.
3. When
REPEAT
X
is asserted, the counter will reset to the last valid address loaded
via
ADS
X
.
4. The sleep mode pin shuts off all dynamc inputs, except JTAG inputs, when
asserted. All static inputs, i.e., PL/
FT
x and OPTx and the sleep mode pins
themselves (ZZx) are not affected during sleep mode. It is recommended that
boundry scan not be operated during sleep mode.
5. Address A
17x
is a NC for the IDT70T3799M
6. Chip Enables and Byte Enables are double buffered when PL/
FT
= V
IH
, i.e., the
signals take two cycles to deselect.
相关PDF资料 |
PDF描述 |
|---|---|
| IDT70T3799MS133BBG | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3799MS133BBGI | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3799MS166BBG | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3799MS166BBGI | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T631S | 122 x 32 pixel format, Compact LCD size |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70T3799MS133BBG | 功能描述:IC SRAM 9MBIT 133MHZ 324BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T3799MS133BBGI | 功能描述:IC SRAM 9MBIT 133MHZ 324BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T3799MS166BBG | 功能描述:IC SRAM 9MBIT 166MHZ 324BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T631S10BC | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T631S10BC8 | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
发布紧急采购，3分钟左右您将得到回复。