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参数资料
| 型号： | IDT70T3799MS133BBG |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | DRAM |
| 英文描述： | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| 中文描述： | 128K X 72 DUAL-PORT SRAM, 15 ns, PBGA324 |
| 封装： | 19 X 19 MM, 1.40 MM HEIGHT, 1.76 MM PITCH, GREEN, BGA-324 |
| 文件页数： | 24/25页 |
| 文件大小： | 316K |
| 代理商： | IDT70T3799MS133BBG |
6.42
IDT70T3719/99M
High-Speed 2.5V 256/128K x 72 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Advanced
24
Identific ation Register Definitions
Instruction Field
Array
B
Value
Array
B
Instruction Field
Array
A
Value
Array
A
Description
Revision Number (31:28)
0x0
Revision Number (63:60)
0x0
Reserved for Version number
IDT Device ID (27:12)
(1)
0x330
IDT Device ID (59:44)
(1)
0x330
Defines IDT Part number
IDT JEDEC ID (11:1)
0x33
IDT JEDEC ID (43:33)
0x33
Allows unique identification of device vendor as IDT
ID Register Indicator Bit (Bit 0)
1
ID Register Indicator Bit (Bit 32)
1
Indicates the presence of an ID Register
5687 tbl 17
S c an Register S izes
Register Name
Bit Size
Array A
Bit Size
Array B
Bit Size
70T3719M
Instruction (IR)
4
4
8
Bypass (BYR)
1
1
2
Identification (IDR)
32
32
64
Boundary Scan (BSR)
Note (3)
Note (3)
Note (3)
5687 tbl 18
S ystem Interfac e Parameters
Instruction
Code
Description
EXTEST
00000000
Forces contents of the boundary scan cells onto the device outputs
(1)
.
Places the boundary scan register (BSR) between TDI and TDO.
BYPASS
11111111
Places the bypass register (BYR) between TDI and TDO.
IDCODE
00100010
Loads the ID register (IDR) with the vendor ID code and places the
register between TDI and TDO.
HIGHZ
01000100
Places the bypass register (BYR) between TDI and TDO. Forces all
device output drivers except
INT
x and
COL
x to a High-Z state.
CLAMP
00110011
Uses BYR. Forces contents of the boundary scan cells onto the device
outputs. Places the bypass register (BYR) between TDI and TDO.
SAMPLE/PRELOAD
00010001
Places the boundary scan register (BSR) between TDI and TDO.
SAMPLE allows data fromdevice inputs
to be captured in the
boundary scan cells and shifted serially through TDO. PRELOAD allows
data to be input serially into the boundary scan cells via the TDI.
RESERVED
01010101, 01110111,
10001000, 10011001,
10101010, 10111011,
11001100
Several combinations are reserved. Do not use codes other than those
identified above.
PRIVATE
01100110,11101110,
11011101
For internal use only.
5687 tbl 19
NOTES:
1. Device outputs = All device outputs except TDO.
2. Device inputs = All device inputs except TDI, TMS, and
TRST
.
3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com, or by contacting your local
IDT sales representative.
NOTE:
1. Device ID for IDT70T3719Mis 0x330. Device ID for IDT70T3799Mis 0x331.
相关PDF资料 |
PDF描述 |
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| IDT70T3799MS133BBGI | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
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相关代理商/技术参数 |
参数描述 |
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| IDT70T3799MS133BBGI | 功能描述:IC SRAM 9MBIT 133MHZ 324BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T3799MS166BBG | 功能描述:IC SRAM 9MBIT 166MHZ 324BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T631S10BC | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T631S10BC8 | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T631S10BCI | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
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