参数资料
型号: IDT70T3799MS133BBG
厂商: INTEGRATED DEVICE TECHNOLOGY INC
元件分类: DRAM
英文描述: HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
中文描述: 128K X 72 DUAL-PORT SRAM, 15 ns, PBGA324
封装: 19 X 19 MM, 1.40 MM HEIGHT, 1.76 MM PITCH, GREEN, BGA-324
文件页数: 5/25页
文件大小: 316K
代理商: IDT70T3799MS133BBG
6.42
IDT70T3719/99M
High-Speed 2.5V 256/128K x 72 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Truth Table I—Read/Write and Enable Control
(1,2,3,4,5)
OE
CLK
CE
0
CE
1
Byte Enables
R/
W
Advanced
NOTES:
1. "H" = V
IH,
"L" = V
IL,
"X" = Don't Care.
2.
ADS
,
CNTEN
,
REPEAT
= Don't Care. See Truth Table II.
3.
OE
and ZZ are asynchronous input signals.
4. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here.
5. For the examples shown here,
BE
n may correspond to any of the eight byte enable signals.
ZZ
I/O Operation
(6)
MODE
X
H
X
All
BE
= X
X
L
All Bytes= High-Z
Deselected: Power Down
X
X
L
All
BE
= X
X
L
All Bytes = High-Z
Deselected: Power Down
X
L
H
All
BE
= H
X
L
All Bytes = High-Z
All Bytes Deselected
X
L
H
BE
n
= L,
All other
BE
= H
L
L
Byte
n
= D
IN
,
All other
Bytes
= High-Z Write to Byte X Only
X
L
H
BE
4-7
= L,
BE
0-3
= H
L
L
Byte
4-7
= D
IN
,
Byte
0-3
= High-Z
Write to Lower Bytes Only
X
L
H
BE
4-7
= H,
BE
0-3
= L
L
L
Byte
4-7
= High-Z, Byte
0-3
= D
IN
Write to Upper Bytes Only
X
L
H
BE
0-7
= L
L
L
Byte
0-7
= D
IN
Write to All Bytes
L
L
H
BE
n
= L,
All other
BE
= H
H
L
Byte
n
= D
OUT
,
All other
Bytes
= High-Z Read Byte X Only
L
L
H
BE
4-7
= L,
BE
0-3
= H
H
L
Byte
4-7
= D
OUT
,
Byte
0-3
= High-Z
Read Lower Bytes Only
L
L
H
BE
4-7
= H,
BE
0-3
= L
H
L
Byte
4-7
= High-Z, Byte
0-3
= D
OUT
Read Upper Bytes Only
L
L
H
All
BE
= L
H
L
All Bytes = D
OUT
Read All Bytes
H
X
X
X
All
BE
= X
X
L
All Bytes =
High-Z
Outputs Disabled
X
X
X
X
All
BE
=
X
X
H
All Bytes =
High-Z
Sleep Mode
5687 tbl 03
Truth Table II—Address Counter Control
(1,2)
NOTES:
1. "H" = V
IH,
"L" = V
IL,
"X" = Don't Care.
2. Read and write operations are controlled by the appropriate setting of R/
W
,
CE
0
, CE
1
,
BE
n and
OE
.
3. Outputs configured in flow-through output mode: if outputs are in pipelined mode the data out will be delayed by one cycle.
4.
ADS
and
REPEAT
are independent of all other memory control signals including
CE
0
, CE
1
and
BE
n.
5. The address counter advances if
CNTEN
= V
IL
on the rising edge of CLK, regardless of all other memory control signals including
CE
0
, CE
1
,
BE
n.
6. When
REPEAT
is asserted, the counter will reset to the last valid address loaded via
ADS
. This value is not set at power-up: a known location should be loaded
via
ADS
during initialization if desired. Any subsequent
ADS
access during operations will update the
REPEAT
address location.
Address
Previous
Internal
Address
Internal
Address
Used
CLK
ADS
(4)
CNTEN
REPEAT
(4,6)
I/O
(3)
MODE
An
X
An
L
X
H
D
I/O
(n)
External Address Used
X
An
An + 1
H
L
(5)
H
D
I/O
(n+1)
Counter Enabled-Internal Address generation
X
An + 1
An + 1
H
H
H
D
I/O
(n+1)
Enabled Address Blocked-Counter disabled (An + 1 reused)
X
X
An
X
X
L
D
I/O
(n)
Counter Set to last valid
ADS
load
5687 tbl 04
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