参数资料
型号: IDT70V3389S6BF
厂商: IDT, Integrated Device Technology Inc
文件页数: 17/17页
文件大小: 0K
描述: IC SRAM 1.125MBIT 6NS 208FBGA
标准包装: 7
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 1.125M(64K x 18)
速度: 6ns
接口: 并联
电源电压: 3.15 V ~ 3.45 V
工作温度: 0°C ~ 70°C
封装/外壳: 208-LFBGA
供应商设备封装: 208-CABGA(15x15)
包装: 托盘
其它名称: 70V3389S6BF
IDT70V3389S
High-Speed 64K x 18 3.3V Dual-Port Synchronous Pipelined Static RAM
Datasheet Document History (cont'd)
Industrial and Commercial Temperature Ranges
01/18/99:
Initial Public Release
03/15/99:
Page 9
Additional notes
04/28/99:
06/08/99:
06/15/99:
Added fpBGA paclage
Page 2 Changed package body height from 1.5mm to 1.4mm
Page 5 Deleted note 6 for Table II
0714//99:
08/04/99:
Page 2
Page 6
Corrected pin T3 to V DDQL
Improved power numbers
10/01/99:
11/12/99:
02/28/00:
05/01/00:
01/10/01:
04/10/01:
12/12/01:
01/05/06:
02/08/06:
07/25/08:
01/19/09:
Upgraded speed to 133MHz, added 2.5V I/O capability
Replaced IDT logo
Added new BGA package, added full 2.5V interface capability
Page 2 Added ball pitch
Page 3 Renamed pins
Page 6 Made corrections to Truth Table
Page 9 Changed ? numbers in figure 2
Page 4 Added information to pin and pin notes
Page 6 Increated storage temperature parameter
Clarified T A Parameter
Page 8 DC Electrical parameters–changed wording from "open" to "disabled"
Removed note 7 on DC Characteristics table
Removed Preliminary status
Added Industrial Temperature Ranges and removed related notes
Page 2, Added date revision to pin configurations
3&4
Page 6 Removed industrial temp footnote from table 04
Page 8 Removed industrial temp for 6ns from DC & AC Electrical Characteristic
& 10
Page 16 Removed industrial temp from 6ns in ordering information
Added industrial temp footnote
Page 1 Replaced TM logo with ? logo
& 17
Page 1 Added green availability to features
Page 16 Added green indicator to ordering information
Page 5 Changed footnote 2 for Truth Table I from ADS , CNTEN , CNTRST = V IH to ADS , CNTEN , CNTRST = X
Page 8 Corrected a typo in the DC Chars table
Page 16 Removed "IDT" from orderable part number
CORPORATE HEADQUARTERS
6024 Silver Creek Valley Road
San Jose, CA 95138
for SALES:
800-345-7015 or 408-284-8200
fax: 408-284-2775
for Tech Support:
408-284-2794
DualPortHelp@idt.com
www.idt.com
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
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IDT70V3389S6BF8 功能描述:IC SRAM 1.125MBIT 6NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V3389S6BFG 制造商:Integrated Device Technology Inc 功能描述:
IDT70V3389S6PRF 功能描述:IC SRAM 1.125MBIT 6NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V3389S6PRF8 功能描述:IC SRAM 1.125MBIT 6NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V3399S133BC 功能描述:IC SRAM 2MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)