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参数资料
| 型号： | IDT70V3399S133BCI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 19/23页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 2MBIT 133MHZ 256BGA |
| 标准包装： | 6 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 2M（128K x 18） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 3.15 V ~ 3.45 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 256-LBGA |
| 供应商设备封装： | 256-CABGA（17x17） |
| 包装： | 托盘 |
| 其它名称： | 70V3399S133BCI |
IDT70V3319/99S
High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM
Industrial and Commercial Temperature Ranges
Functional Description
The IDT70V3319/99 provides a true synchronous Dual-Port Static
RAM interface. Registered inputs provide minimal set-up and hold times
on address, data, and all critical control inputs. All internal registers are
clocked on the rising edge of the clock signal, however, the self-timed
internal write pulse is independent of the LOW to HIGH transition of the clock
signal.
An asynchronous output enable is provided to ease asyn-
chronous bus interfacing. Counter enable inputs are also provided to stall
the operation of the address counters for fast interleaved
memory applications.
A HIGH on CE 0 or a LOW on CE 1 for one clock cycle will power down
the internal circuitry to reduce static power consumption. Multiple chip
enables allow easier banking of multiple IDT70V3319/99s for depth
expansion configurations. Two cycles are required with CE 0 LOW and
CE 1 HIGH to re-activate the outputs.
A 18 /A 17(1)
Depth and Width Expansion
The IDT70V3319/99 features dual chip enables (refer to Truth
Table I) in order to facilitate rapid and simple depth expansion with no
requirements for external logic. Figure 4 illustrates how to control the
various chip enables in order to expand two devices in depth.
The IDT70V3319/99 can also be used in applications requiring
expanded width, as indicated in Figure 4. Through combining the control
signals, the devices can be grouped as necessary to accommodate
applications needing 36-bits or wider.
IDT70V3319/99
CE 0
IDT70V3319/99
CE 0
Control Inputs
CE 1
V DD
Control Inputs
CE 1
V DD
IDT70V3319/99
CE 1
IDT70V3319/99
CE 1
Control Inputs
CE 0
Control Inputs
CE 0
UB , LB ,
R/ W ,
OE ,
CLK,
NOTE:
1. A 17 is for IDT70V3319, A 16 is for IDT70V3399.
Figure 4. Depth and Width Expansion with IDT70V3319/99
19
6.42
5623 drw 20
ADS ,
REPEAT ,
CNTEN
,
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70V3399S133BCI8 | 功能描述:IC SRAM 2MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V3399S133BF | 功能描述:IC SRAM 2MBIT 133MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V3399S133BF8 | 功能描述:IC SRAM 2MBIT 133MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V3399S133BFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 2MBIT 133MHZ 208FPBGA |
| IDT70V3399S133BFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 2MBIT 133MHZ 208FPBGA |
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