参数资料
型号: IDT70V3399S133BCI
厂商: IDT, Integrated Device Technology Inc
文件页数: 9/23页
文件大小: 0K
描述: IC SRAM 2MBIT 133MHZ 256BGA
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 2M(128K x 18)
速度: 133MHz
接口: 并联
电源电压: 3.15 V ~ 3.45 V
工作温度: -40°C ~ 85°C
封装/外壳: 256-LBGA
供应商设备封装: 256-CABGA(17x17)
包装: 托盘
其它名称: 70V3399S133BCI
IDT70V3319/99S
High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (3) (V DD = 3.3V ± 150mV)
70V3319/99S166
Com'l Only
70V3319/99S133
Com'l
& Ind
Symbol
Parameter
Test Condition
Version
Typ. (4)
Max.
Typ. (4)
Max.
Unit
I DD
Dynamic Operating
CE L and CE R = V IL ,
COM'L
S
370
500
320
400
mA
Current (Both
Outputs Disabled,
Ports Active)
f = f MAX (1)
IND
S
____
____
320
480
I SB1
Standby Current
CE L = CE R = V IH,
COM'L
S
125
200
115
160
mA
(Both Ports - TTL
Outputs Disabled,
Level Inputs)
f = f MAX (1)
IND
S
____
____
115
195
I SB2
Standby Current
CE "A" = V IL and CE "B" = V IH (5)
COM'L
S
250
350
220
290
mA
(One Port - TTL
Active Port Outputs Disabled,
Level Inputs)
f=f MAX (1)
IND
S
____
____
220
350
I SB3
I SB4
Full Standby Current
(Both Ports - CMOS
Level Inputs)
Full Standby Current
Both Ports Outputs Disabled
CE L and CE R > V DDQ - 0.2V,
V IN > V DDQ - 0.2V
or V IN < 0.2V, f = 0 (2)
CE "A" < 0.2V and CE "B" > V DDQ - 0.2V (5)
COM'L
IND
COM'L
S
S
S
15
____
250
30
____
350
15
15
220
30
40
290
mA
mA
(One Port - CMOS
V IN > V DDQ - 0.2V or V IN < 0.2V
Level Inputs)
Active Port, Outputs Disabled, f = f MAX (1)
IND
S
____
____
220
350
NOTES:
5623 tbl 09
1. At f = f MAX , address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/t CYC , using "AC TEST CONDITIONS" at input
levels of GND to 3V.
2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. V DD = 3.3V, T A = 25°C for Typ, and are not production tested. I DD DC (f=0) = 120mA (Typ).
5. CE X = V IL means CE 0X = V IL and CE 1X = V IH
CE X = V IH means CE 0X = V IH or CE 1X = V IL
CE X < 0.2V means CE 0X < 0.2V and CE 1X > V DDQ - 0.2V
CE X > V DDQ - 0.2V means CE 0X > V DDQ - 0.2V or CE 1X - 0.2V
"X" represents "L" for left port or "R" for right port.
9
6.42
相关PDF资料
PDF描述
305-072-520-208 CONN CARDEDGE 72POS .156X.14"
IDT70V658S12BFI IC SRAM 2MBIT 12NS 208FBGA
IDT70V658S12BFGI IC SRAM 2MBIT 12NS 208FBGA
IDT70V639S12BFI IC SRAM 2.25MBIT 12NS 208FBGA
IDT70V658S12BCI IC SRAM 2MBIT 12NS 256BGA
相关代理商/技术参数
参数描述
IDT70V3399S133BCI8 功能描述:IC SRAM 2MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V3399S133BF 功能描述:IC SRAM 2MBIT 133MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V3399S133BF8 功能描述:IC SRAM 2MBIT 133MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V3399S133BFGI 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 2MBIT 133MHZ 208FPBGA
IDT70V3399S133BFGI8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 2MBIT 133MHZ 208FPBGA