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参数资料
| 型号： | IDT70V3399S133BCI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 7/23页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 2MBIT 133MHZ 256BGA |
| 标准包装： | 6 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 2M（128K x 18） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 3.15 V ~ 3.45 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 256-LBGA |
| 供应商设备封装： | 256-CABGA（17x17） |
| 包装： | 托盘 |
| 其它名称： | 70V3399S133BCI |
IDT70V3319/99S
High-Speed 3.3V 256/128K x 18 Dual-Port Synchronous Static RAM
Industrial and Commercial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage (1)
Recommended DC Operating
Conditions with V DDQ at 2.5V
Ambient
Symbol
Parameter
Min.
Typ.
Max.
Unit
0 C to +70 C
-40 C to +85 C
Grade
Commercial
Industrial
Temperature
O O
O O
GND
0V
0V
V DD
3.3V + 150mV
3.3V + 150mV
V DD
V DDQ
V SS
Core Supply Voltage
I/O Supply Voltage (3)
Ground
3.15
2.4
0
3.3
2.5
0
3.45
2.6
0
V
V
V
5623 tbl 04
NOTES:
1. This is the parameter TA. This is the "instant on" case temperature.
V IH
Input High Voltage
(Address & Control Inputs)
1.7
____
V DDQ + 100mV
(2)
V
V IH
V IL
Input High Voltage - I/O (3)
Input Low Voltage
1.7
-0.3 (1)
____
____
V DDQ + 100mV (2)
0.7
V
V
NOTES:
5623 tbl 05a
Absolute Maximum Ratings (1)
1. Undershoot of V IL > -1.5V for pulse width less than 10ns is allowed.
2. V TERM must not exceed V DDQ + 100mV.
Symbol
V TERM(2)
Rating
Terminal Voltage
Commercial
& Industrial
-0.5 to +4.6
Unit
V
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V IL (0V), and V DDQX for that port must be supplied
as indicated above.
T BIAS(3)
with Respect to GND
Temperature Under Bias
-55 to +125
o
C
Recommended DC Operating
Conditions with V DDQ at 3.3V
T STG
T JN
Storage Temperature
Junction Temperature
-65 to +150
+150
o
o
C
C
Symbol
V DD
Parameter
Core Supply Voltage
Min.
3.15
Typ.
3.3
Max.
3.45
Unit
V
I OUT
DC Output Current
50
mA
V DDQ
I/O Supply Voltage (3)
3.15
3.3
3.45
V
5623 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
V SS
V IH
Ground
Input High Voltage
(Address & Control Inputs) (3)
0
2.0
0
____
0
V DDQ + 150mV
(2)
V
V
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
V IH
V IL
Input High Voltage - I/O (3)
Input Low Voltage
2.0
-0.3 (1)
____
____
V DDQ + 150mV (2)
0.8
V
V
2. V TERM must not exceed V DD + 150mV for more than 25% of the cycle time or
4ns maximum, and is limited to < 20mA for the period of V TERM > V DD + 150mV.
NOTES:
5623 tbl 05b
3. Ambient Temperature Under Bias. No AC Conditions. Chip Deselected.
1. Undershoot of V IL > -1.5V for pulse width less than 10ns is allowed.
2. V TERM must not exceed V DDQ + 150mV.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V IH (3.3V), and V DDQX for that port must be
supplied as indicated above.
7
6.42
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| IDT70V3399S133BCI8 | 功能描述:IC SRAM 2MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V3399S133BF | 功能描述:IC SRAM 2MBIT 133MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V3399S133BF8 | 功能描述:IC SRAM 2MBIT 133MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V3399S133BFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 2MBIT 133MHZ 208FPBGA |
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