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| 型号： | IDT70V639S12PRF8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 7/23页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 2.25MBIT 12NS 128TQFP |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 2.25M（128K x 18） |
| 速度： | 12ns |
| 接口： | 并联 |
| 电源电压： | 3.15 V ~ 3.45 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 128-LQFP |
| 供应商设备封装： | 128-TQFP（14x20） |
| 包装： | 带卷 (TR) |
| 其它名称： | 70V639S12PRF8 |
IDT70V639S
High-Speed 3.3V 128K x 18 Asynchronous Dual-Port Static RAM
Recommended Operating
Temperature and Supply Voltage (1)
Industrial and Commercial Temperature Ranges
Recommended DC Operating
Conditions with V DDQ at 2.5V
Ambient
Symbol
Parameter
Min.
Typ.
Max.
Unit
Grade
Temperature
GND
V DD
V DD
Core Supply Voltage
3.15
3.3
3.45
V
-40 C to +85 C
Commercial
Industrial
0 O C to +70 O C
O O
0V
0V
3.3V + 150mV
3.3V + 150mV
V DDQ
V SS
I/O Supply Voltage
Ground
(3)
2.4
0
2.5
0
2.6
0
V
V
Input High Voltage
NOTE:
1. This is the parameter T A . This is the "instant on" case temperature.
5621 tbl 04
V IH
(3)
(Address & Control Inputs)
1.7
____
V DDQ + 100mV
(2)
V
-0.5
V IH
V IL
Input High Voltage - I/O (3)
Input Low Voltage
1.7
(1)
____
____
V DDQ + 100mV (2)
0.7
V
V
5621 tbl 06
NOTES:
Absolute Maximum Ratings (1)
1. V IL > -1.5V for pulse width less than 10 ns.
2. V TERM must not exceed V DDQ + 100mV.
Symbol
V TERM (2)
Rating
Terminal Voltage
Commercial
& Industrial
-0.5 to +4.6
Unit
V
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V IL (0V), and V DDQX for that port must be supplied
as indicated above.
with Respect to GND
T BIAS (3)
T STG
T JN
Temperature Under Bias
Storage Temperature
Junction Temperature
-55 to +125
-65 to +150
+150
o
o
o
C
C
C
Recommended DC Operating
Conditions with V DDQ at 3.3V
Symbol Parameter Min. Typ. Max.
Unit
I OUT
NOTES:
DC Output Current
50
mA
5621 tbl 05
V DD
V DDQ
Core Supply Voltage
(3)
I/O Supply Voltage
3.15
3.15
3.3
3.3
3.45
3.45
V
V
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
V SS
Ground
0
0
0
V
operation of the device at these or any other conditions above those indicated
V IH
Input High Voltage
2.0
____
V DDQ + 150mV
(2)
V
in the operational sections of this specification is not implied. Exposure to absolute
(Address & Control Inputs) (3)
maximum rating conditions for extended periods may affect reliability.
2. V TERM must not exceed V DD + 150mV for more than 25% of the cycle time or
V IH
Input High Voltage - I/O (3)
2.0
____
V DDQ + 150mV (2)
V
4ns maximum, and is limited to < 20mA for the period of V TERM > V DD + 150mV.
3. Ambient Temperature Under Bias. No AC Conditions. Chip Deselected.
V IL
Input Low Voltage
-0.3
(1)
____
0.8
V
NOTES:
1. V IL > -1.5V for pulse width less than 10 ns.
2. V TERM must not exceed V DDQ + 150mV.
5621 tbl 07
Capacitance (1)
(T A = +25°C, F = 1.0MH Z ) TQFP ONLY
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V IH (3.3V), and V DDQX for that port must be
supplied as indicated above.
Symbol
C IN
C OUT (2)
Parameter
Input Capacitance
Output Capacitance
Conditions
V IN = 0V
V OUT = 0V
Max.
8
10.5
Unit
pF
pF
NOTES:
5621 tbl 08
1. These parameters are determined by device characterization, but are not
production tested.
2. C OUT also references C I/O .
7
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