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| 型号： | IDT70V639S12PRFI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 12/23页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 2.25MBIT 12NS 128TQFP |
| 标准包装： | 6 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 2.25M（128K x 18） |
| 速度： | 12ns |
| 接口： | 并联 |
| 电源电压： | 3.15 V ~ 3.45 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 128-LQFP |
| 供应商设备封装： | 128-TQFP（14x20） |
| 包装： | 托盘 |
| 其它名称： | 70V639S12PRFI |
IDT70V639S
High-Speed 3.3V 128K x 18 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Write Cycle No. 1, R/ W Controlled Timing (1,5,8)
t WC
ADDRESS
t HZ (7)
OE
CE or SEM
(9)
t AW
t HZ (7)
UB , LB
t AS (6)
t WP (2)
t WR (3)
R/ W
DATA OUT
t LZ
t WZ (7)
(4)
t OW
(4)
DATA IN
t DW
t DH
,
5621 drw 08
Timing Waveform of Write Cycle No. 2, CE Controlled Timing (1,5)
t WC
ADDRESS
t AW
CE or SEM
(9)
UB , LB (9)
R/ W
DATA IN
(6)
t AS
t EW (2)
t DW
t WR (3)
t DH
5621 drw 09
.
NOTES:
1. R/ W or CE or UB and LB = V IH during all address transitions.
2. A write occurs during the overlap (t EW or t WP ) of a CE = V IL and a R/ W = V IL for memory array writing cycle.
3. t WR is measured from the earlier of CE or R/ W (or SEM or R/ W ) going HIGH to the end of write cycle.
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the CE or SEM = V IL transition occurs simultaneously with or after the R/ W = V IL transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal is asserted last, CE or R/ W .
7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load
(Figure 2).
8. If OE = V IL during R/W controlled write cycle, the write pulse width must be the larger of t WP or (t WZ + t DW ) to allow the I/O drivers to turn off and data to be
placed on the bus for the required t DW . If OE = V IH during an R/ W controlled write cycle, this requirement does not apply and the write pulse can be as short as the
specified t WP .
9. To access RAM, CE = V IL and SEM = V IH . To access semaphore, CE = V IH and SEM = V IL . t EW must be met for either condition.
12
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| IDT70V639S12PRFI8 | 功能描述:IC SRAM 2.25MBIT 12NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V639S15BC | 功能描述:IC SRAM 2.25MBIT 15NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V639S15BC8 | 功能描述:IC SRAM 2.25MBIT 15NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V639S15BF | 功能描述:IC SRAM 2.25MBIT 15NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V639S15BF8 | 功能描述:IC SRAM 2.25MBIT 15NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
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