参数资料
型号: IDT70V7339S166BCI
厂商: IDT, Integrated Device Technology Inc
文件页数: 14/21页
文件大小: 0K
描述: IC SRAM 9MBIT 166MHZ 256BGA
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 9M(512K x 18)
速度: 166MHz
接口: 并联
电源电压: 3.15 V ~ 3.45 V
工作温度: -40°C ~ 85°C
封装/外壳: 256-LBGA
供应商设备封装: 256-CABGA(17x17)
包装: 托盘
其它名称: 70V7339S166BCI
IDT70V7339S
High-Speed 512K x 18 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Pipelined Read-to-Write-to-Read
( OE = V IL ) (2) t CYC2
t CH2 t CL2
CLK
CE 0
CE 1
t SC
t SB
t HC
t HB
UB / LB
t SW t HW
R/ W
t SW t HW
(3)
ADDRESS
An
An +1
An + 2
An + 2
An + 3
An + 4
DATA IN
t SA
t HA
t SD t HD
Dn + 2
DATA OUT
(1)
t CD2
Qn
t CKHZ
t CKLZ
t CD2
Qn + 3
READ
NOP
(4)
WRITE
READ
NOTES:
5628 drw 12
1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
2. CE 0 , BE n , and ADS = V IL ; CE 1 , CNTEN , and REPEAT = V IH . "NOP" is "No Operation".
3. Addresses do not have to be accessed sequentially since ADS = V IL constantly loads the address on the rising edge of the CLK; numbers
are for reference use only.
4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
Timing Waveform of Pipelined Read-to-Write-to-Read ( OE Controlled) (2)
t CYC2
CLK
CE 0
t CH2
t CL2
CE 1
t SC
t SB
t HC
t HB
UB / LB
t SW t HW
R/ W
t SW t HW
(3)
ADDRESS
An
An +1
An + 2
An + 3
An + 4
An + 5
t SA
t HA
t SD
t HD
DATA IN
(1)
t CD2
Dn + 2
Dn + 3
t CKLZ
t CD2
DATA OUT
Qn
(4)
Qn + 4
t OHZ
OE
NOTES:
READ
WRITE
READ
5628 drw 13
1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
2. CE 0 , UB / LB , and ADS = V IL ; CE 1 , CNTEN , and REPEAT = V IH .
3. Addresses do not have to be accessed sequentially since ADS = V IL constantly loads the address on the rising edge of the CLK; numbers are for reference
use only.
4. This timing does not meet requirements for fastest speed grade. This waveform indicates how logically it could be done if timing so allows.
14
6.42
相关PDF资料
PDF描述
IDT70V7519S166DRI IC SRAM 9MBIT 166MHZ 208QFP
IDT70V7599S133DRI IC SRAM 4MBIT 133MHZ 208QFP
IDT70V9089L6PF IC SRAM 512KBIT 6NS 100TQFP
IDT70V9169L7BFI IC SRAM 144KBIT 7NS 100FBGA
IDT70V9189L9PFI IC SRAM 576KBIT 9NS 100TQFP
相关代理商/技术参数
参数描述
IDT70V7339S166BCI8 功能描述:IC SRAM 9MBIT 166MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V7339S166BF 功能描述:IC SRAM 9MBIT 166MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V7339S166BF8 功能描述:IC SRAM 9MBIT 166MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V7339S166BFG 功能描述:IC SRAM 9MBIT 166MHZ 208FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V7339S166BFG8 功能描述:IC SRAM 9MBIT 166MHZ 208FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)