参数资料
型号: IDT70V7519S166DRI
厂商: IDT, Integrated Device Technology Inc
文件页数: 11/22页
文件大小: 0K
描述: IC SRAM 9MBIT 166MHZ 208QFP
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 9M(256K x 36)
速度: 166MHz
接口: 并联
电源电压: 3.15 V ~ 3.45 V
工作温度: -40°C ~ 85°C
封装/外壳: 208-BFQFP
供应商设备封装: 208-PQFP(28x28)
包装: 托盘
其它名称: 70V7519S166DRI
IDT70V7519S
High-Speed 256K x 36 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the Operating Temperature Range
(Read and Write Cycle Timing) (2,3) (V DD = 3.3V ± 150mV, T A = 0°C to +70°C)
70V7519S200 (5)
Com'l Only
70V7519S166 (3,4)
Com'l
& Ind
70V7519S133 (3)
Com'l
& Ind
Clock Cycle Time (Flow-Through)
Clock High Time (Flow-Through)
Clock Low Time (Flow-Through)
Clock Low Time (Pipelined)
Symbol
t CYC1
t CYC2
t CH1
t CL1
t CH2
t CL2
t R
t F
t SA
t HA
t SC
t HC
t SB
t HB
t SW
t HW
t SD
t HD
t SAD
t HAD
t SCN
t HCN
t SRPT
t HRPT
t OE
t OLZ
t OHZ
Clock Cycle Time (Pipelined) (1)
Clock High Time (Pipelined) (2)
(1)
Clock Rise Time
Clock Fall Time
Address Setup Time
Address Hold Time
Chip Enable Setup Time
Chip Enable Hold Time
Byte Enable Setup Time
Byte Enable Hold Time
R/W Setup Time
R/W Hold Time
Input Data Setup Time
Input Data Hold Time
ADS Setup Time
ADS Hold Time
CNTEN Setup Time
CNTEN Hold Time
REPEAT Setup Time
REPEAT Hold Time
Output Enable to Data Valid
Output Enable to Output Low-Z
Output Enable to Output High-Z
(1)
(1)
(1)
Parameter
Min.
15
5
5
5
2.0
2.0
____
____
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
1.5
0.5
____
0.5
1
Max.
____
____
____
____
____
____
1.5
1.5
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
4.0
____
3.4
Min.
20
6
6
6
2.1
2.1
____
____
1.7
0.5
1.7
0.5
1.7
0.5
1.7
0.5
1.7
0.5
1.7
0.5
1.7
0.5
1.7
0.5
____
0.5
1
Max.
____
____
____
____
____
____
1.5
1.5
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
4.0
____
3.6
Min.
25
7.5
7
7
2.6
2.6
____
____
1.8
0.5
1.8
0.5
1.8
0.5
1.8
0.5
1.8
0.5
1.8
0.5
1.8
0.5
1.8
0.5
____
0.5
1
Max.
____
____
____
____
____
____
1.5
1.5
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
____
4.2
____
4.2
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t CD1
t CD2
t DC
t CKHZ
t CKLZ
Clock to Data Valid (Flow-Through)
Clock to Data Valid (Pipelined) (1)
Data Output Hold After Clock High
Clock High to Output High-Z
Clock High to Output Low-Z
(1)
____
____
1
1
0.5
10
3.4
____
3.4
____
____
____
1
1
0.5
12
3.6
____
3.6
____
____
____
1
1
0.5
15
4.2
____
4.2
____
ns
ns
ns
ns
ns
Port-to-Port Delay
t CO
Clock-to-Clock Offset
5.0
____
6.0
____
7.5
____
ns
NOTES:
5618 tbl 11
1. The Pipelined output parameters (t CYC2 , t CD2 ) apply to either or both left and right ports when FT /PIPE X = V IH . Flow-through parameters (t CYC1 , t CD1 ) apply when
FT /PIPE X = V IL for that port.
2. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable ( OE ) and FT /PIPE. FT /PIPE should be treated as a
DC signal, i.e. steady state during operation.
3. These values are valid for either level of V DDQ (3.3V/2.5V). See page 5 for details on selecting the desired operating voltage levels for each port.
4. 166MHz Industrial Temperature not available in BF-208 package.
5. This speed grade available when V DDQ = 3.3.V for a specific port (i.e., OPTx = V IH ). This speed grade available in BC-256 package only.
11
6.42
相关PDF资料
PDF描述
IDT70V7599S133DRI IC SRAM 4MBIT 133MHZ 208QFP
IDT70V9089L6PF IC SRAM 512KBIT 6NS 100TQFP
IDT70V9169L7BFI IC SRAM 144KBIT 7NS 100FBGA
IDT70V9189L9PFI IC SRAM 576KBIT 9NS 100TQFP
IDT70V9199L9PFI IC SRAM 1.125MBIT 9NS 100TQFP
相关代理商/技术参数
参数描述
IDT70V7519S200BC 功能描述:IC SRAM 9MBIT 200MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V7519S200BC8 功能描述:IC SRAM 9MBIT 200MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V7519S200BCG 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 200MHZ 256CABGA
IDT70V7519S200BCG8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 200MHZ 256CABGA
IDT70V7599S133BC 功能描述:IC SRAM 4MBIT 133MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)