参数资料
型号: IDT70V9089S12PF
厂商: IDT, Integrated Device Technology Inc
文件页数: 17/19页
文件大小: 0K
描述: IC SRAM 512KBIT 12NS 100TQFP
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 512K (64K x 8)
速度: 12ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 托盘
其它名称: 70V9089S12PF
IDT70V9089/79S/L
High Speed 3.3V 64/32K x 8 Synchronous Dual-Port Static RAM
Functional Description
The IDT70V9089/79 provides a true synchronous Dual-Port Static
RAM interface. Registered inputs provide minimal set-up and hold times
on address, data, and all critical control inputs. All internal registers are
clocked on the rising edge of the clock signal, however, the self-timed
internal write pulse is independent of the LOW to HIGH transition of the clock
signal.
An asynchronous output enable is provided to ease asynchronous
bus interfacing. Counter enable inputs are also provided to stall the
operation of the counter registers for fast interleaved memory applications.
A HIGH on CE 0 or a LOW on CE 1 for one clock cycle will power down
the internal circuitry to reduce static power consumption. Multiple chip
enables allow easier banking of multiple IDT70V9089/79's for depth
expansion configurations. When the Pipelined output mode is enabled, two
cycles are required with CE 0 LOW and CE 1 HIGH to re-activate the
outputs.
A 16 /A 15(1)
Industrial and Commercial Temperature Ranges
Depth and Width Expansion
The IDT70V9089/79 features dual chip enables (refer to Truth Table
I) in order to facilitate rapid and simple depth expansion with no require-
ments for external logic. Figure 4 illustrates how to control the various chip
enables in order to expand two devices in depth.
The IDT70V9089/79 can also be used in applications requiring
expanded width, as indicated in Figure 4. Since the banks are allocated
at the discretion of the user, the external controller can be set up to drive
the input signals for the varioius devices as required to allow for 16-bit or
wider applications.
IDT70V9089/79
CE 0
IDT70V9089/79
CE 0
Control Inputs
CE 1
V DD
Control Inputs
CE 1
V DD
IDT70V9089/79
CE 1
IDT70V9089/79
CE 1
Control Inputs
CE 0
Control Inputs
CE 0
CNTRST
CLK
ADS
CNTEN
,
NOTE:
1. A 16 is for ID70V9089. A 15 is for ID70V9079.
3750 drw 18
Figure 4. Depth and Width Expansion with IDT70V9089/79
17
6.42
R/ W
OE
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IDT70V9089S15PF 功能描述:IC SRAM 512KBIT 15NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V9089S15PF8 功能描述:IC SRAM 512KBIT 15NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT70V9089S9PF 功能描述:IC SRAM 512KBIT 9NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
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