参数资料
型号: IDT70V9089S12PF
厂商: IDT, Integrated Device Technology Inc
文件页数: 4/19页
文件大小: 0K
描述: IC SRAM 512KBIT 12NS 100TQFP
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 512K (64K x 8)
速度: 12ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 托盘
其它名称: 70V9089S12PF
IDT70V9089/79S/L
High Speed 3.3V 64/32K x 8 Synchronous Dual-Port Static RAM
Recommended Operating
Temperature and Supply Voltage (1)
Industrial and Commercial Temperature Ranges
Recommended DC Operating
Conditions
Grade
Ambient
Temperature
GND
V DD
Symbol
Parameter
Min.
Typ.
Max.
Unit
V DD
Supply Voltage
3.0
3.3
3.6
V
Commercial
0 O C to +70 O C
0V
3.3V + 0.3V
V SS
Ground
0
0
0
V
Industrial
-40 O C to +85 O C
0V
3.3V + 0.3V
V IH
Input High Voltage
2.2
____
V DD + 0.3V
(1)
V
-0.3
NOTES:
3750 tbl 04
V IL
Input Low Voltage
(2)
____
0.8
V
1. This is the parameter T A . This is the "instant on" case temperature.
Absolute Maximum Ratings (1)
NOTES:
1. V TERM must not exceed V DD +0.3V.
2. V IL > -1.5V for pulse width less than 10ns.
Capacitance (T A = +25°C, f = 1.0MH z )
3750 tbl 05
Symbol
Rating
Commercial
Unit
Symbol
Parameter (1)
Conditions (2)
Max.
Unit
& Industrial
C IN
Input Capacitance
V IN = 3dV
9
pF
C OUT
V TERM (2)
Terminal Voltage
with Respect
-0.5 to +4.6
V
(3)
Output Capacitance
V OUT = 3dV
10
pF
to GND
NOTES:
3750 tbl 07
T BIAS
Temperature
-55 to +125
o
C
1. These parameters are determined by device characterization, but are not
Under Bias
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
T STG
T JN
Storage Temperature
Junction Temperature
-65 to +150
+150
o
o
C
C
from 0V to 3V or from 3V to 0V.
3. C OUT also references C I/O .
I OUT
DC Output Current
50
mA
3750 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V TERM must not exceed V DD +0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V TERM > V DD + 0.3V.
3. Ambient Temperature Under Bias. Chip Deselected.
6.42
相关PDF资料
PDF描述
IDT709089S12PF IC SRAM 512KBIT 12NS 100TQFP
006207341914000+ CONN FPC R ANGLE 1.25 MM 14POS
IDT709279S12PF IC SRAM 512KBIT 12NS 100TQFP
IDT70V27L35PF8 IC SRAM 512KBIT 35NS 100TQFP
IDT70V27L25PF8 IC SRAM 512KBIT 25NS 100TQFP
相关代理商/技术参数
参数描述
IDT70V9089S12PF8 功能描述:IC SRAM 512KBIT 12NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT70V9089S15PF 功能描述:IC SRAM 512KBIT 15NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V9089S15PF8 功能描述:IC SRAM 512KBIT 15NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT70V9089S9PF 功能描述:IC SRAM 512KBIT 9NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V9089S9PF8 功能描述:IC SRAM 512KBIT 9NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8