参数资料
型号: IDT70V9279L7PRFI
厂商: IDT, Integrated Device Technology Inc
文件页数: 17/19页
文件大小: 0K
描述: IC SRAM 512KBIT 7NS 128TQFP
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 512K (32K x 16)
速度: 7ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 128-LQFP
供应商设备封装: 128-TQFP(14x20)
包装: 托盘
其它名称: 70V9279L7PRFI
IDT70V9279/69S/L
High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM
Functional Description
The IDT70V9279/69 provides a true synchronous Dual-Port Static
RAM interface. Registered inputs provide minimal set-up and hold times
on address, data, and all critical control inputs. All internal registers are
clocked on the rising edge of the clock signal, however, the self-timed
internal write pulse is independent of the LOW to HIGH transition of the clock
signal.
An asynchronous output enable is provided to ease asynchronous
bus interfacing. Counter enable inputs are also provided to staff the
operation of the address counters for fast interleaved memory applications.
A HIGH on CE 0 or a LOW on CE 1 for one clock cycle will power down
the internal circuitry to reduce static power consumption. Multiple chip
enables allow easier banking of multiple IDT70V9279/69's for depth
expansion configurations. When the Pipelined output mode is enabled, two
cycles are required with CE 0 LOW and CE 1 HIGH to re-activate the
outputs.
A 15 /A 14(1)
Industrial and Commercial Temperature Ranges
Depth and Width Expansion
The IDT70V9279/69 features dual chip enables (refer to Truth Table
I) in order to facilitate rapid and simple depth expansion with no require-
ments for external logic. Figure 4 illustrates how to control the varioius chip
enables in order to expand two devices in depth.
The IDT70V9279/69 can also be used in applications requiring
expanded width, as indicated in Figure 4. Since the banks are allocated
at the discretion of the user, the external controller can be set up to drive
the input signals for the various devices as required to allow for 32-bit or
wider applications.
IDT70V9279/69
CE 0
IDT70V9279/69
CE 0
Control Inputs
CE 1
V DD
Control Inputs
CE 1
V DD
IDT70V9279/69
CE 1
IDT70V9279/69
CE 1
Control Inputs
CE 0
Control Inputs
CE 0
CNTRST
CLK
,
ADS
CNTEN
Figure 4. Depth and Width Expansion with IDT70V9279/69
3743 drw 19
R/ W
LB , UB
OE
NOTE:
1. A 15 is for IDT70V9279. A 14 is for IDT70V9269.
17
6.42
相关PDF资料
PDF描述
IDT70V9359L7BFI IC SRAM 144KBIT 7NS 100FBGA
IDT70V9369L7PFI IC SRAM 288KBIT 7NS 100TQFP
IDT70V9389L6PRF IC SRAM 1.125MBIT 6NS 128TQFP
IDT71016S20YGI IC SRAM 1MBIT 20NS 44SOJ
IDT71024S25TYGI IC SRAM 1MBIT 25NS 32SOJ
相关代理商/技术参数
参数描述
IDT70V9279L7PRFI8 功能描述:IC SRAM 512KBIT 7NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V9279L9PRF 功能描述:IC SRAM 512KBIT 9NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V9279L9PRF8 功能描述:IC SRAM 512KBIT 9NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V9279S12PRF 功能描述:IC SRAM 512KBIT 12NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V9279S12PRF8 功能描述:IC SRAM 512KBIT 12NS 128TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8