参数资料
型号: IDT7130LA35TFG
厂商: IDT, Integrated Device Technology Inc
文件页数: 15/21页
文件大小: 0K
描述: IC SRAM 8KBIT 35NS 64STQFP
标准包装: 40
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 8K (1K x 8)
速度: 35ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 64-LQFP
供应商设备封装: 64-TQFP(10x10)
包装: 托盘
其它名称: 7130LA35TFG
800-1440
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Port-to-Port Read and BUSY (2,3,4)
t WC
ADDR "A"
MATCH
t WP
R/ W "A"
t DW
t DH
t APS
DATA IN"A"
ADDR "B"
(1)
VALID
MATCH
t BAA
t BDA
t BDD
BUSY "B"
t WDD
DATA OUT"B"
VALID
t DDD
2689 drw 12
NOTES:
1. To ensure that the earlier of the two ports wins. t BDD is ignored for slave (IDT7140).
2. CE L = CE R = V IL
3. OE = V IL for the reading port.
4. All timing is the same for the left and right ports. Port 'A' may be either the left or right port. Port "B" is opposite from port "A".
Timing Waveform of Write with BUSY (3)
t WP
R/ W "A"
t WB
BUSY "B"
t WH (1)
NOTES:
R/ W "B"
(2)
2689 drw 13
,
1. t WH must be met for both BUSY Input (IDT7140, slave) or Output (IDT7130 master).
2. BUSY is asserted on port "B" blocking R/ W "B" , until BUSY "B" goes HIGH.
3. All timing is the same for the left and right ports. Port "A" may be either the left or right port. Port "B" is oppsite from port "A".
15
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