参数资料
型号: IDT7130LA35TFG
厂商: IDT, Integrated Device Technology Inc
文件页数: 7/21页
文件大小: 0K
描述: IC SRAM 8KBIT 35NS 64STQFP
标准包装: 40
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 8K (1K x 8)
速度: 35ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 64-LQFP
供应商设备封装: 64-TQFP(10x10)
包装: 托盘
其它名称: 7130LA35TFG
800-1440
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (1,5) (V CC = 5.0V ± 10%)
7130X20 (2)
7140X20 (2)
Com'l Only
7130X25
7140X25
Com'l, Ind
& Military
7130X35
7140X35
Com'l
& Military
Symbol
Parameter
Test Condition
Version
Typ.
Max.
Typ.
Max.
Typ.
Max.
Unit
I CC
I SB1
I SB2
I SB3
I SB4
Dynamic Operating
Current
(Both Ports Active)
Standby Current
(Both Ports - TTL
Level Inputs)
Standby Current
(One Port - TTL
Level Inputs)
Full Standby Current
(Both Ports -
CMOS Level Inputs)
Full Standby Current
(One Port -
CMOS Level Inputs)
CE L and CE R = V IL ,
Outputs Disabled
f = f MAX (3)
CE L and CE R = V IH
f = f MAX (3)
CE "A" = V IL and CE "B" = V IH (6)
Active Port OutputsDisabled,
f=f MAX (3)
CE L and
CE R > V CC - 0.2V,
V IN > V CC - 0.2V or
V IN < 0.2V, f = 0 (4)
CE "A" < 0.2V and
CE "B" > V CC - 0.2V (6)
V IN > V CC - 0.2V or V IN < 0.2V
Active Port Outputs Disabled,
f = f MAX (3)
COM'L
MIL &
IND
COM'L
MIL &
IND
COM'L
MIL &
IND
COM'L
MIL &
IND
COM'L
MIL &
IND
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
110
110
____
____
30
30
____
____
65
65
____
____
1.0
0.2
____
____
60
60
____
____
250
200
____
____
65
45
____
____
165
125
____
____
15
5
____
____
155
115
____
____
110
110
110
110
30
30
30
30
65
65
65
65
1.0
0.2
1.0
0.2
60
60
60
60
220
170
280
220
65
45
80
60
150
115
160
125
15
5
30
10
145
105
155
115
110
110
110
110
25
25
25
25
50
50
50
50
1.0
0.2
____
____
45
45
45
45
165
120
230
170
65
45
80
60
125
90
150
115
30
10
____
____
110
85
145
105
mA
mA
mA
mA
mA
2689 tbl 06a
7130X55
7140X55
Com'l, Ind
& Military
7130X100
7140X100
Com'l, Ind
& Military
Symbol
Parameter
Test Condition
Version
Typ.
Max.
Typ.
Max.
Unit
I CC
I SB1
I SB2
I SB3
I SB4
Dynamic Operating
Current
(Both Ports Active)
Standby Current
(Both Ports - TTL
Level Inputs)
Standby Current
(One Port - TTL
Level Inputs)
Full Standby Current
(Both Ports -
CMOS Level Inputs)
Full Standby Current
(One Port -
CMOS Level Inputs)
CE L and CE R = V IL ,
Outputs Disabled
f = f MAX (3)
CE L and CE R = V IH
f = f MAX (3)
CE "A" = V IL and CE "B" = V IH (6)
Active Port Outputs Disabled,
f=f MAX (3)
CE L and
CE R > V CC - 0.2V,
V IN > V CC - 0.2V or
V IN < 0.2V, f = 0 (4)
CE "A" < 0.2V and
CE "B" > V CC - 0.2V (6)
V IN > V CC - 0.2V or V IN < 0.2V
Active Port Outputs Disabled,
f = f MAX (3)
COM'L
MIL &
IND
COM'L
MIL &
IND
COM'L
MIL &
IND
COM'L
MIL &
IND
COM'L
MIL &
IND
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
SA
LA
110
110
110
110
20
20
20
20
40
40
40
40
1.0
0.2
1.0
0.2
40
40
40
40
155
110
190
140
65
35
65
45
110
75
125
90
15
4
30
10
100
70
110
85
110
110
110
110
20
20
20
20
40
40
40
40
1.0
0.2
1.0
0.2
40
40
40
40
155
110
190
140
55
35
65
45
110
75
125
90
15
4
30
10
95
70
110
80
mA
mA
mA
mA
mA
NOTES:
2689 tbl 06b
1. 'X' in part numbers indicates power rating (SA or LA).
2. PLCC , TQFP and STQFP packages only.
3. At f = f MAX , address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t CYC , and using “AC TEST CONDITIONS” of input levels
of GND to 3V.
4. f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby.
5. Vcc = 5V, T A =+25°C for Typ and is not production tested. Vcc DC = 100 mA (Typ)
6. Port "A" may be either left or right port. Port "B" is opposite from port "A".
7
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