参数资料
型号: IDT7130SA55P
厂商: IDT, Integrated Device Technology Inc
文件页数: 18/21页
文件大小: 0K
描述: IC SRAM 8KBIT 55NS 48DIP
标准包装: 7
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 8K (1K x 8)
速度: 55ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 48-DIP(0.600",15.24mm)
供应商设备封装: 48-PDIP
包装: 管件
其它名称: 7130SA55P
IDT7130SA55P-ND
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM
Military, Industrial and Commercial Temperature Ranges
Truth Tables
Truth Table I — Non-Contention Read/Write Control (4)
Inputs (1)
R/ W
X
X
L
H
H
CE
H
H
L
L
L
OE
X
X
X
L
H
D 0-7
Z
Z
DATA IN
DATA OUT
Z
Function
Port Disabled and in Power-Down Mode, I SB2 or I SB4
CE R = CE L = V IH , Power-Down Mode, I SB1 or I SB3
Data on Port Written into Memory (2)
Data in Memory Output on Port (3)
High Impedance Outputs
NOTES:
1. A 0L – A 10L ≠ A 0R – A 10R .
2. If BUSY = L, data is not written.
3. If BUSY = L, data may not be valid, see t WDD and t DDD timing.
4. 'H' = V IH , 'L' = V IL , 'X' = DON’T CARE, 'Z' = HIGH IMPEDANCE
Truth Table II — Interrupt Flag (1,4)
Left Port
Right Port
2689 tbl 13
H
R/ W L
L
X
X
X
CE L
L
X
X
L
OE L
X
X
X
L
A 9L -A 0L
3FF
X
X
3FE
INT L
X
X
L (3)
(2)
R/ W R
X
X
L
X
CE R
X
L
L
X
OE R
X
L
X
X
A 9R -A 0R
X
3FF
3FE
X
INT R
L (2)
H (3)
X
X
Function
Set Right INT R Flag
Reset Right INT R Flag
Set Left INT L Flag
Reset Left INT L Flag
NOTES :
1. Assumes BUSY L = BUSY R = V IH
2. If BUSY L = V IL , then No Change.
3. If BUSY R = V IL , then No Change.
4. 'H' = HIGH,' L' = LOW,' X' = DON’T CARE
Truth Table III — Address BUSY
Arbitration
2689 tbl 14
Inputs
Outputs
CE L
X
H
X
L
CE R
X
X
H
L
A 0L -A 9L
A 0R -A 9R
NO MATCH
MATCH
MATCH
MATCH
BUSY L (1)
H
H
H
(2)
BUSY R (1)
H
H
H
(2)
Function
Normal
Normal
Normal
Write Inhibit (3)
NOTES:
2689 tbl 15
1. Pins BUSY L and BUSY R are both outputs for IDT7130 (master). Both are inputs for
IDT7140 (slave). BUSY X outputs on the IDT7130 are open drain, not push-pull
outputs. On slaves the BUSY X input internally inhibits writes.
2. 'L' if the inputs to the opposite port were stable prior to the address and enable inputs
of this port. 'H' if the inputs to the opposite port became stable after the address and
enable inputs of this port. If t APS is not met, either BUSY L or BUSY R = LOW will
result. BUSY L and BUSY R outputs can not be LOW simultaneously.
3. Writes to the left port are internally ignored when BUSY L outputs are driving LOW
regardless of actual logic level on the pin. Writes to the right port are internally
ignored when BUSY R outputs are driving LOW regardless of actual logic level on
the pin.
18
相关PDF资料
PDF描述
IDT7130LA35TF8 IC SRAM 8KBIT 35NS 64STQFP
15-38-8120 CONN FFC FEMALE 12POS .100 TIN
IDT70125S55J8 IC SRAM 18KBIT 55NS 52PLCC
15-38-8108 CONN FFC FEMALE 10POS .100 TIN
15-38-8118 CONN FFC FEMALE 11POS .100 TIN
相关代理商/技术参数
参数描述
IDT7130SA55PF 功能描述:IC SRAM 8KBIT 55NS 64TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT7130SA55PF8 功能描述:IC SRAM 8KBIT 55NS 64TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M(256K x 18) 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x20) 包装:托盘
IDT7130SA55TF 功能描述:IC SRAM 8KBIT 55NS 64STQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT7130SA55TF8 功能描述:IC SRAM 8KBIT 55NS 64STQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT71321LA20J 功能描述:IC SRAM 16KBIT 20NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M(256K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:71V67703S75PFGI