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参数资料
| 型号： | IDT71321LA25PFI8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 3/17页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 16KBIT 25NS 64TQFP |
| 标准包装： | 750 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 16K (2K x 8) |
| 速度： | 25ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 64-LQFP |
| 供应商设备封装： | 64-TQFP（14x14） |
| 包装： | 带卷 (TR) |
| 其它名称： | 71321LA25PFI8 |
IDT71321SA/LA and IDT71421SA/LA
High Speed 2K x 8 Dual-Port Static RAM with Interrupts
Capacitance (1)
(TA = +25°C, f = 1.0MHz) TQFP Only
Industrial and Commercial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage (1,2)
Symbol
Parameter
Conditions (2)
Max.
Unit
Grade
Ambient
GND
Vcc
C IN
Input Capacitance
V IN = 3dV
9
pF
Temperature
C OUT
Output Capacitance
V OUT = 3dV
10
pF
Commercial
0 O C to +70 O C
0V
5.0V + 10%
2691 tbl 00
Industrial
-40 O C to +85 O C
0V
5.0V + 10%
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dv references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
2691 tbl 02
NOTES:
1. This is the parameter T A . This is the "instant on" case temperature.
2. Industrial temperature: for specific speeds, packages and powers contact your
sales office.
Absolute Maximum Ratings (1)
Symbol Rating Commercial
Unit
Recommended DC Operating
Conditions
& Industrial
Symbol
Parameter
Min.
Typ.
Max.
Unit
V TERM (2)
Terminal Voltage
with Respect
-0.5 to +7.0
V
V CC
Supply Voltage
4.5
5.0
5.5
V
to GND
GND
Ground
0
0
0
V
6.0
T BIAS
T STG
Temperature
Under Bias
Storage
-55 to +125
-65 to +150
o
o
C
C
V IH
V IL
Input High Voltage
Input Low Voltage
2.2
-0.5 (1)
____
____
(2)
0.8
V
V
Temperature
NOTES:
2691 tbl 03
I OUT
DC Output
Current
50
mA
1. V IL (min.) = -1.5V for pulse width less than 10ns.
2. V TERM must not exceed Vcc + 10%.
2691 tbl 01
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of the specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. V TERM must not exceed V CC + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V TERM > V CC + 10%.
3
6.42
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相关代理商/技术参数 |
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|---|---|
| IDT71321LA25TF | 功能描述:IC SRAM 16KBIT 25NS 64STQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT71321LA25TF8 | 功能描述:IC SRAM 16KBIT 25NS 64STQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT71321LA25TFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 25NS 64TQFP |
| IDT71321LA25TFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 25NS 64TQFP |
| IDT71321LA25TFI | 功能描述:IC SRAM 16KBIT 25NS 64STQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
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