- 您现在的位置：买卖IC网 > PDF目录4112 > IDT71321LA25PFI8 (IDT, Integrated Device Technology Inc)IC SRAM 16KBIT 25NS 64TQFP PDF资料下载
参数资料
| 型号： | IDT71321LA25PFI8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 9/17页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 16KBIT 25NS 64TQFP |
| 标准包装： | 750 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 16K (2K x 8) |
| 速度： | 25ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 64-LQFP |
| 供应商设备封装： | 64-TQFP（14x14） |
| 包装： | 带卷 (TR) |
| 其它名称： | 71321LA25PFI8 |
IDT71321SA/LA and IDT71421SA/LA
High Speed 2K x 8 Dual-Port Static RAM with Interrupts
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temeprature and Supply Voltage Range (4)
71321X20
71421X20
Com'l Only
71321X25
71421X25
Com'l
& Ind
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
Write Pulse Width
t WC
t EW
t AW
t AS
t WP
t WR
t DW
Write Cycle Time (2)
Chip Enable to End-of-Write
Address Valid to End-of-Write
Address Set-up Time
(3)
Write Recovery Time
Data Valid to End-of-Write
20
15
15
0
15
0
10
____
____
____
____
____
____
____
25
20
20
0
15
0
12
____
____
____
____
____
____
____
ns
ns
ns
ns
ns
ns
ns
t HZ
Output High-Z Time
(1)
____
10
____
10
ns
t DH
t WZ
t OW
Data Hold Time
Write Enable to Output in High-Z (1)
Output Active from End-of-Write (1)
0
____
0
____
10
____
0
____
0
____
10
____
ns
ns
ns
2691 tbl 09a
71321X35
71421X35
Com'l Only
71321X55
71421X55
Com'l
& Ind
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
t WC
t EW
t AW
t AS
t WP
t WR
t DW
Write Cycle Time (2)
Chip Enable to End-of-Write
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width (3)
Write Recovery Time
Data Valid to End-of-Write
35
30
30
0
25
0
15
____
____
____
____
____
____
____
55
40
40
0
30
0
20
____
____
____
____
____
____
____
ns
ns
ns
ns
ns
ns
ns
t HZ
Output High-Z Time
(1)
____
15
____
25
ns
Write Enable to Output in High-Z
t DH
t WZ
Data Hold Time
(1)
0
____
____
15
0
____
____
30
ns
ns
t OW
Output Active from End-of-Write
(1)
0
____
0
____
ns
NOTES:
2691 tbl 09b
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2). This parameter is guaranteed by
device characterization but is not production tested.
2. For Master/Slave combination, t WC = t BAA + t WP , since R/ W = V IL must occur after t BAA .
3. If OE is LOW during a R/ W controlled write cycle, the write pulse width must be the larger of t WP or (t WZ + t DW ) to allow the I/O drivers to turn off data to be
placed on the bus for the required t DW . If OE is HIGH during a R/ W controlled write cycle, this requirement does not apply and the write pulse can be as short
as the specified t WP .
4. 'X' in part numbers indicates power rating (SA or LA).
9
6.42
相关PDF资料 |
PDF描述 |
|---|---|
| 2-84953-4 | CONN FPC 24POS 1MM RT ANG SMD |
| FMC30DRYS | CONN EDGECARD 60POS DIP .100 SLD |
| ASM12DREN | CONN EDGECARD 24POS .156 EYELET |
| ASM12DREH | CONN EDGECARD 24POS .156 EYELET |
| 2-84953-0 | CONN FPC 20POS 1MM RT ANG SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT71321LA25TF | 功能描述:IC SRAM 16KBIT 25NS 64STQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT71321LA25TF8 | 功能描述:IC SRAM 16KBIT 25NS 64STQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT71321LA25TFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 25NS 64TQFP |
| IDT71321LA25TFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 25NS 64TQFP |
| IDT71321LA25TFI | 功能描述:IC SRAM 16KBIT 25NS 64STQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
发布紧急采购，3分钟左右您将得到回复。