参数资料
型号: IDT71321LA55TF8
厂商: IDT, Integrated Device Technology Inc
文件页数: 8/17页
文件大小: 0K
描述: IC SRAM 16KBIT 55NS 64STQFP
标准包装: 1,250
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 16K (2K x 8)
速度: 55ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 64-LQFP
供应商设备封装: 64-TQFP(10x10)
包装: 带卷 (TR)
其它名称: 71321LA55TF8
IDT71321SA/LA and IDT71421SA/LA
High Speed 2K x 8 Dual-Port Static RAM with Interrupts
Industrial and Commercial Temperature Ranges
Timing Waveform of Read Cycle No. 1, Either Side (1)
t RC
ADDRESS
t OH
t AA
t OH
DATA OUT
BUSY OUT
PREVIOUS DATA VALID
t BDDH (2,3)
DATA VALID
2691 drw 06
NOTES:
1. R/ W = V IH , CE = V IL , and is OE = V IL . Address is valid prior to the coincidental with CE transition LOW.
2. t BDD delay is required only in the case where the opposite port is completing a write operation to the same address location. For simultaneous read operations
BUSY has no relationship to valid output data.
3. Start of valid data depends on which timing becomes effective last t AOE , t ACE , t AA , and t BDD .
Timing Waveform of Read Cycle No. 2, Either Side (3)
t ACE
CE
t AOE
OE
DATA OUT
t LZ (1)
(4)
t HZ (2)
VALID DATA
t HZ (2)
I CC
t PU
t LZ
(1)
t PD
(4)
CURRENT
50%
50%
I SS
2691 drw 07
NOTES:
1. Timing depends on which signal is asserted last, OE or CE .
2. Timing depends on which signal is de-asserted first, OE or CE .
3. R/ W = V IH and OE = V IL , and the address is valid prior to or coincidental with CE transition LOW.
4. Start of valid data depends on which timing becomes effective last t AOE , t ACE , t AA , and t BDD .
8
6.42
相关PDF资料
PDF描述
IDT7140LA35PF8 IC SRAM 8KBIT 35NS 64TQFP
IDT7130LA35PF8 IC SRAM 8KBIT 35NS 64TQFP
AMM43DSEI-S243 CONN EDGECARD 86POS .156 EYELET
AMM44DSES CONN EDGECARD 88POS .156 EYELET
AMM44DRTS CONN EDGECARD 88POS DIP .156 SLD
相关代理商/技术参数
参数描述
IDT71321LA55TFG 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 55NS 64TQFP
IDT71321LA55TFG8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 55NS 64TQFP
IDT71321SA20J 功能描述:IC SRAM 16KBIT 20NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M(256K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:71V67703S75PFGI
IDT71321SA20J8 功能描述:IC SRAM 16KBIT 20NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M(256K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:71V67703S75PFGI
IDT71321SA20PF 功能描述:IC SRAM 16KBIT 20NS 64TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M(256K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:71V67703S75PFGI