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参数资料
| 型号： | IDT7134SA55P |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 32KBIT 55NS 48DIP |
| 标准包装： | 7 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 32K (4K x 8) |
| 速度： | 55ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 48-DIP（0.600"，15.24mm） |
| 供应商设备封装： | 48-PDIP |
| 包装： | 管件 |
| 其它名称： | 7134SA55P |
IDT7134SA/LA
High-Speed 4K x 8 Dual-Port Static SRAM
Military, Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings (1)
Symbol Rating Commercial Military
& Industrial
V TERM (2) Terminal Voltage -0.5 to +7.0 -0.5 to +7.0
with Respect
to GND
Unit
V
Recommended Operating
Temperature and Supply Voltage (1,2)
Grade Ambient GND Vcc
Temperature
Military -55 O C to +125 O C 0V 5.0V + 10%
T BIAS
T STG
Temperature
Under Bias
Storage
Temperature
-55 to +125
-65 to +150
-65 to +135
-65 to +150
o
o
C
C
Commercial
Industrial
NOTES:
0 O C to +70 O C
-40 O C to +85 O C
0V
0V
5.0V + 10%
5.0V + 10%
2720 tbl 03
P T (3)
I OUT
Power
Dissipation
DC Output
Current
1.5
50
1.5
50
W
mA
1. This is the parameter T A . This is the "instant on" case temperature.
NOTES:
2720 tbl 01
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Recommended DC Operating
Conditions
Symbol Parameter Min. Typ. Max.
Unit
2. V TERM must not exceed Vcc + 10% for more than 25%of the cycle time or 10 ns
maximum, and is limited to < 20mA for the period of V TERM > Vcc +10%.
3. V TERM = 5.5V.
V CC
GND
V IH
Supply Voltage
Ground
Input High Voltage
4.5
0
2.2
5.0
0
____
5.5
0
6.0 (2)
V
V
V
V IL
Input Low Voltage
-0.5
Capacitance (1) (T A =+25°C, f =1.0MHz)
Symbol Parameter Conditions (2) Max. Unit
C IN Input Capacitance V IN = 3dV 11 pF
NOTES:
1. V IL (min.) > -1.5V for pulse width less than 10ns.
2. V TERM must not exceed Vcc + 10%.
(1)
____
0.8
V
2720 tbl 04
C OUT
Output Capacitance
V OUT = 3dV
11
pF
NOTES:
2720 tbl 02
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V and from 3V to 0V.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (V CC = 5V ± 10%)
7134SA
7134LA
Input Leakage Current
Symbol
|I LI |
|I LO |
V OL
V OH
Parameter
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V CC = 5.5V, V IN = 0V to V CC
CE - V IH , V OUT = 0V to V CC
I OL = 6mA
I OL = 8mA
I OH = -4mA
Min.
___
___
___
___
2.4
Max.
10
10
0.4
0.5
___
Min.
___
___
___
___
2.4
Max.
5
5
0.4
0.5
___
Unit
μA
μA
V
V
V
NOTES:
1. At Vcc < 2.0V input leakages are undefined.
3
2720 tbl 05
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相关代理商/技术参数 |
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| IDT7134SA70CB | 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 70NS SB48 |
| IDT7134SA70J | 功能描述:IC SRAM 32KBIT 70NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA（6x8） 包装:带卷 (TR) |
| IDT7134SA70J8 | 功能描述:IC SRAM 32KBIT 70NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA（6x8） 包装:带卷 (TR) |
| IDT7134SA70L48B | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 70NS 48LCC |
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