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参数资料
| 型号： | IDT71V25761S183PFG |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 4/21页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 4MBIT 183MHZ 100TQFP |
| 标准包装： | 72 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 同步 |
| 存储容量： | 4.5M（128K x 36） |
| 速度： | 183MHz |
| 接口： | 并联 |
| 电源电压： | 3.135 V ~ 3.465 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 100-LQFP |
| 供应商设备封装： | 100-TQFP（14x20） |
| 包装： | 托盘 |
IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with
2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Absolute Maximum Ratings (1)
Commercial &
Commercial and Industrial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage
V TERM
Symbol
(2)
V TERM (3,6)
Rating
Terminal Voltage with
Respect to GND
Terminal Voltage with
Industrial
-0.5 to +4.6
-0.5 to V DD
Unit
V
V
Grade
Commercial
Industrial
Temperature (1)
0°C to +70°C
-40°C to +85°C
V SS
0V
0V
V DD
3.3V±5%
3.3V±5%
V DDQ
2.5V±5%
2.5V±5%
Respect to GND
NOTES:
5297 tbl 04
V TERM (4,6)
Terminal Voltage with
-0.5 to V DD +0.5
V
1. T A is the "instant on" case temperature.
Respect to GND
C
V TERM (5,6)
Terminal Voltage with
Respect to GND
Commercial
-0.5 to V DDQ +0.5
-0 to +70
V
o
Recommended DC Operating
Conditions
T A
(7)
Operating Temperature
Symbol
Parameter
Min.
Typ.
Max.
Unit
Industrial
-40 to +85
o
C
V DD
Core Supply Voltage
3.135
3.3
3.465
V
Operating Temperature
V DDQ
I/O Supply Voltage
2.375
2.5
2.625
V
T BIAS
T STG
Temperature
Under Bias
Storage
Temperature
-55 to +125
-55 to +125
o
o
C
C
V SS
V IH
Supply Voltage
Input High Voltage -
Inputs
0
1.7
0
____
0
V DD
+0.3
V
V
P T
I OUT
Power Dissipation
DC Output Current
2.0
50
W
mA
V IH
V IL
Input High Voltage - I/O
Input Low Voltage
1.7
-0.3 (2)
____
____
V DDQ
+0.3 (1)
0.7
V
V
NOTES:
5297 tbl 03
NOTES:
5297 tbl 05
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V DD terminals only.
3. V DDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supplies have
ramped up. Power supply sequencing is not necessary; however, the voltage
on any input or I/O pin cannot exceed V DDQ during power supply ramp up.
7. T A is the "instant on" case temperature.
100 pin TQFP Capacitance
(T A = +25°C, f = 1.0MHz)
1. V IH (max) = V DDQ + 1.0V for pulse width less than t CYC/2 , once per cycle.
2. V IL (min) = -1.0V for pulse width less than t CYC/2 , once per cycle.
119 BGA Capacitance
(T A = +25°C, f = 1.0MHz)
Symbol
Parameter
(1)
Conditions
Max.
Unit
Symbol
Parameter (1)
Conditions
Max.
Unit
C IN
C I/O
Input Capacitance
I/O Capacitance
V IN = 3dV
V OUT = 3dV
5
7
pF
pF
C IN
C I/O
Input Capacitance
I/O Capacitance
V IN = 3dV
V OUT = 3dV
7
7
pF
pF
165 fBGA Capacitance
(T A = +25°C, f = 1.0MHz)
5297 tbl 07
5297 tbl 07a
Symbol
C IN
C I/O
Parameter (1)
Input Capacitance
I/O Capacitance
Conditions
V IN = 3dV
V OUT = 3dV
Max.
7
7
Unit
pF
pF
NOTE:
5297 tb l 07b
1. This parameter is guaranteed by device characterization, but not production tested.
6.42
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT71V25761S183PFG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 183MHZ 100TQFP |
| IDT71V25761S183PFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 183MHZ 100TQFP |
| IDT71V25761S183PFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 183MHZ 100TQFP |
| IDT71V25761S183PFI | 功能描述:IC SRAM 4MBIT 183MHZ 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M（128K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA（14x22） 包装:托盘 其它名称:71V3557SA75BGI |
| IDT71V25761S183PFI8 | 功能描述:IC SRAM 4MBIT 183MHZ 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M（128K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA（14x22） 包装:托盘 其它名称:71V3557SA75BGI |
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