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参数资料
| 型号： | IDT71V25761S183PFG |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 8/21页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 4MBIT 183MHZ 100TQFP |
| 标准包装： | 72 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 同步 |
| 存储容量： | 4.5M（128K x 36） |
| 速度： | 183MHz |
| 接口： | 并联 |
| 电源电压： | 3.135 V ~ 3.465 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 100-LQFP |
| 供应商设备封装： | 100-TQFP（14x20） |
| 包装： | 托盘 |
IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with
2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (V DD = 3.3V ± 5%)
ZZ, LBO and JTAG Input Leakage Current
Symbol
|I LI |
|I LZZ |
|I LO |
V OL
V OH
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Parameter
(1)
Test Conditions
V DD = Max., V IN = 0V to V DD
V DD = Max., V IN = 0V to V DD
V OUT = 0V to V DDQ , Device Deselected
I OL = +6mA, V DD = Min.
I OH = -6mA, V DD = Min.
Min.
___
___
___
___
2.0
Max.
5
30
5
0.4
___
Unit
μA
μA
μA
V
V
NOTE:
5297 tbl 08
1. The LBO , TMS, TDI, TCK and TRST pins will be internally pulled to V DD and the ZZ pin will be internally pulled to V SS if they are not actively driven in the application.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (1)
200MHz
183MHz
166MHz
Symbol
I DD
Parameter
Operating Power Supply
Test Conditions
Device Selected, Outputs Open, V DD = Max.,
Com'l Only
360
Com'l
340
Ind
350
Com'l
320
Ind
330
Unit
mA
Current
V DDQ = Max., V IN > V IH or < V IL , f = f MAX (2)
I SB1
CMOS Standby Power
Device Deselected, Outputs Open, V DD = Max.,
30
30
35
30
35
mA
Supply Current
V DDQ = Max., V IN > V HD or < V LD , f = 0 (2,3)
I SB2
Clock Running Power
Device Deselected, Outputs Open, V DD = Max.,
130
120
130
110
120
mA
Supply Current
V DDQ = Max., V IN > V HD or < V LD , f = f MAX (2,3)
I ZZ
Full Sleep Mode Supply
ZZ > V HD, V DD = Max.
30
30
35
30
35
mA
Current
NOTES:
1. All values are maximum guaranteed values.
2. At f = f MAX, inputs are cycling at the maximum frequency of read cycles of 1/t CYC while ADSC = LOW; f=0 means no input lines are changing.
3. For I/Os V HD = V DDQ - 0.2V, V LD = 0.2V. For other inputs V HD = V DD - 0.2V, V LD = 0.2V.
5297 tbl 09
AC Test Conditions
(V DDQ = 2.5V)
Input Pulse Levels
Input Rise/Fall Times
0 to 2.5V
2ns
AC Test Load
I/O
Z 0 = 50 Ω
V DDQ /2
50 Ω
5297 drw 06
,
Input Timing Reference Levels
Output Timing Reference Levels
AC Test Load
(V DDQ /2)
(V DDQ /2)
See Figure 1
6
5
Figure 1. AC Test Load
Δ tCD
5297 tbl 10
4
3
(Typical, ns)
2
1
20 30 50
80 100
Capacitance (pF)
200
5297 drw 07
,
Figure 2. Lumped Capacitive Load, Typical Derating
8
6.42
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT71V25761S183PFG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 183MHZ 100TQFP |
| IDT71V25761S183PFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 183MHZ 100TQFP |
| IDT71V25761S183PFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 183MHZ 100TQFP |
| IDT71V25761S183PFI | 功能描述:IC SRAM 4MBIT 183MHZ 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M（128K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA（14x22） 包装:托盘 其它名称:71V3557SA75BGI |
| IDT71V25761S183PFI8 | 功能描述:IC SRAM 4MBIT 183MHZ 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M（128K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA（14x22） 包装:托盘 其它名称:71V3557SA75BGI |
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