参数资料
型号: IDT71V3556SA100BGI8
厂商: IDT, Integrated Device Technology Inc
文件页数: 28/28页
文件大小: 0K
描述: IC SRAM 4MBIT 100MHZ 119BGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: SRAM - 同步 ZBT
存储容量: 4.5M(128K x 36)
速度: 100MHz
接口: 并联
电源电压: 3.135 V ~ 3.465 V
工作温度: -40°C ~ 85°C
封装/外壳: 119-BGA
供应商设备封装: 119-PBGA(14x22)
包装: 带卷 (TR)
其它名称: 71V3556SA100BGI8
IDT71V3556, IDT71V3558, 128K x 36, 256K x 18, 3.3V Synchronous SRAMS with
ZBT ? Feature, 3.3V I/O, Burst Counter, and Pipelined Outputs
Datasheet Document History
Commercial and Industrial Temperature Ranges
6/30/99
8/23/99
Pg. 4, 5
Pg. 6
Pg. 14
Pg. 15
Pg. 22
Pg. 24
Updated to new format
Added Smart ZBT functionality
Added Note 4 and changed Pins 38, 42, and 43 to DNU
Changed U2–U6 to DNU
Added Smart ZBT AC Electrical Characteristics
Improved t CD and t OE ( MAX ) at 166MHz
Revised t CHZ ( MIN ) for f ≤ 133 MHz
Revised t OHZ ( MAX ) for f ≤ 133 MHz
Improved t CH , t CL for f ≤ 166 MHz
Improved setup times for 100–200 MHz
Added BGA package diagrams
Added Datasheet Document History
10/4/99
Pg. 14
Revised AC Electrical Characteristics table
12/31/99
Pg. 15
Revised t CHZ to match t CLZ and t CDC at 133MHz and 100MHz
Removed Smart functionality
Added Industrial Temperature range offerings at the 100 to 166MHz speed grades.
04/30/00
Pg. 5, 6
Insert clarification note to Recommended Operating Temperature and Absolute Max
Ratings tables
05/26/00
Pg. 6
Pg. 5,6, 7
Pg. 21
Pg. 23
Add BGA capacitance table
Add note to TQFP and BGA Pin Configurations; corrected typo in pinout
Add 100pinTQFP package Diagram Outline
Add new package offering, 13 x 15mm 165 fBGA
Correct 119BGA Package Diagram Outline
07/26/00
Pg. 5-8
Add ZZ sleep mode reference note to BG119, PK100 and BQ165 pinouts
10/25/00
Pg. 8
Pg. 23
Pg. 8
Update BQ165 pinout
Update BG119 package diagram outline dimensions
Remove Preliminary status
Add note to pin N5 on BQ165, reserved for JTAG TRST
1/24/02
9/30 /04
10/18/06
08/11/08
10/14/10
Pg. 1-8, 15,22,23,27
Pg. 7
Pg. 27
Pg. 1, 26
Pg. 1, 15, 16, 27
Pg. 28
Added JTAG "SA" version functionality
Updated pin configuration for the 119 BGA-reordered I/O signals on P6, P7 (128K x 36)
and P7, N6, L6, K7, H6, G7, F6, E7, D6 (256K x 18).
Adding "Restricted hazardous substance device" to ordering information.
Added X generation die step to data sheet.
Remove 200MHz on 128K x 36 configuration.
Removed IDT from the ordering information
CORPORATE HEADQUARTERS
6024 Silver Creek Valley Rd
San Jose, CA 95138
for SALES:
800-345-7015 or 408-284-8200
fax: 408-284-2775
www.idt.com
for Tech Support:
sramhelp@idt.com
800-345-7015 or
408/284-4555
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
ZBT ? and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola Inc.
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IDT71V3556SA100BQ 功能描述:IC SRAM 4MBIT 100MHZ 165FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT71V3556SA100BQ8 功能描述:IC SRAM 4MBIT 100MHZ 165FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M(256K x 18) 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x20) 包装:托盘
IDT71V3556SA100BQG 功能描述:IC SRAM 4MBIT 100MHZ 165FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT71V3556SA100BQG8 功能描述:IC SRAM 4MBIT 100MHZ 165FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M(256K x 18) 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x20) 包装:托盘
IDT71V3556SA100BQGI 功能描述:IC SRAM 4MBIT 100MHZ 165FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)